The effect of neutron irradiation on the properties of n-InSb whisker microcrystals

Bolshakova, І.; Boiko, V. M.; Brudnyi, V. N.; Kаmenskaya, I. V.; Kolin, N. G.; Makido, E. Yu.; Moskovets, T. A.; Merkurisov, D. I.

doi:10.1134/1.1992633

Cited by 15 publications

(10 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The closest experiment to that presented in this article was carried out using the WWR-2 reactor (fluence 7.4 × 10 17 , the temperature during the irradiation of 110 °C). The conclusions presented in [48] are consistent with ours in terms of both the magnitude of the signal drop after irradiation and the estimated optimal input carrier concentration value.…”

Section: Discussion Of Different Sensor Platformssupporting

confidence: 89%

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

El-Ahmar

Przychodnia

Jankowski

et al. 2022

Sensors

View full text Add to dashboard Cite

The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of ≈7×1017 cm−2. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.

show abstract

Section: Discussion Of Different Sensor Platformssupporting

confidence: 89%

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

El-Ahmar

Przychodnia

Jankowski

et al. 2022

Sensors

View full text Add to dashboard Cite

show abstract

“…Before 2003, a technique to grow InSb whisker microcrystal free crystallization from a gaseous phase [ 45 ] with the initial iodine pressure of 375 Torr heated source up to 760 °C is already pioneered; at growth temperature, the carrier gases can react in the growth chamber with the precursors that can be doped with several impurities simultaneously (Sn, Al, and Cr) during their growth [ 46 ]. This kind of addition of impurity as metal droplet acts as seed to start the synthesis of NWs also observed in the conventional CVD.…”

Section: Reviewmentioning

confidence: 99%

Indium Antimonide Nanowires: Synthesis and Properties

et al. 2016

View full text Add to dashboard Cite

This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs–Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

show abstract

“…The magnetic measuring instrumentation (MMI) discussed herein employs Hall sensors based on III-V semiconductor materials InSb and InAs with high mobility of charge carriers as primary magnetic field transducers. A significant amount of studies dedicated to increase in radiation resistance of these materials has been carried out in order to create radiation resistant sensors [4,5]. These studies have shown that irradiation of indium containing semiconductors with neutrons causes the generation of fast neutron induced radiation defects of donor and acceptor nature in such materials.…”

Section: Radiation Resistant Magnetic Field Hall Sensorsmentioning

confidence: 99%

“…Therefore, these materials would require separate approaches to their parameters stabilization at such conditions. The radiation stability of the InSb parameters is achieved through a balance between acceptor type radiation defects and donors generated due to transmutation of indium [4]. Similar stabilization of the irradiated InAs material is possible at the optimum concentration corresponding to the Fermi level pinning in the conduction band [6].…”

Section: Radiation Resistant Magnetic Field Hall Sensorsmentioning

confidence: 99%

“…The radiation physics processes in irradiated semiconductor materials were initially studied on single crystal whickers of InSb and InAs. Their perfect structure has allowed one to reveal the influence of irradiation defects introduced by the neutrons from the reactor on the parameters of the crystals [4]. The results of these studies made it possible to define the optimal parameters of the materials for their stable operation at strong irradiation conditions.…”

Section: Radiation Resistant Magnetic Field Hall Sensorsmentioning

confidence: 99%

See 1 more Smart Citation

Experimental evaluation of stable long term operation of semiconductor magnetic sensors at ITER relevant environment

et al. 2015

View full text Add to dashboard Cite

The paper deals with radiation resistant sensors and their associated measuring instrumentation developed in the course of R and D activities carried out in the framework of an international collaboration. The first trial tests of three-dimensional (3D) probes with Hall sensors have been performed in European tokamaks TORE SUPRA (2004) and JET (2005). Later in 2009 six sets of 3D probes were installed in JET and now continue to operate. The statistical analysis performed in 2014 on the basis of the JET database have demonstrated stable long term operation of all 18 sensors of 3D probes. The results of measurements conducted at the neutron fluxes of nuclear reactors have demonstrated the operability of the sensors up to high neutron fluences of F > 10 18 n • cm −2 that exceeds the maximum one for the locations of steady state sensors in ITER over its total lifetime.

show abstract

The effect of neutron irradiation on the properties of n-InSb whisker microcrystals

Cited by 15 publications

References 10 publications

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

Indium Antimonide Nanowires: Synthesis and Properties

Experimental evaluation of stable long term operation of semiconductor magnetic sensors at ITER relevant environment

Contact Info

Product

Resources

About