The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD

Chayahara, Akiyoshi; Mokuno, Yoshiaki; Horino, Y.; Takasu, Y.; Kato, Hiromitsu; Yoshikawa, Hiromichi; Fujimori, Naoji

doi:10.1016/j.diamond.2004.07.007

Cited by 158 publications

(100 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Without the addition of N 2 , the epitaxial growth rate at 4% CH 4 and 800 • C of about 5 µm/h was reported for the {100} face [23]. In other words, the addition of 4% of N 2 to the gas mixture increases the growth rate by an order of magnitude, in agreement with other publications [7,15].…”

Section: ]/[H] and [Ch X ]/[Chsupporting

confidence: 79%

“…As a result, one can obtain smooth bilayered DCs with increased wear resistance by the CVD method for an optimal nitrogen concentration [3]. The N 2 gas added to standard CH 4 -H 2 mixtures strongly enhances the growth rate SC diamond seeds (typically of {100} orientation) [7,8], thus reducing the cost of CVD diamond production. In case of epitaxial growth of single crystals the growth rate and defect abundance depend on the diamond substrate face orientation, a less number of the defects forming on {100} facets [9].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

et al. 2017

View full text Add to dashboard Cite

Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH 4 -H 2 -N 2 gas mixture with the high concentration (4%) of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD) films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD) superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa) within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film.

show abstract

Section: ]/[H] and [Ch X ]/[Chsupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Almost all NV centers (218) show maximum splitting. Occasionally, some NVs (14), which are indicated by arrows, show a different alignment. We conclude that at least 94 AE 2% of all NV centers within the CVD growth layer are aligned along the growth direction.…”

Section: Nitrogen Vacancy Center Formation For (111)mentioning

confidence: 97%

“…C is described as follows; C ¼ C Surf /d, where C Surf ¼ 1.6 Â 10 6 cm À2 is the observed surface number density of 14 …”

Section: Nvmentioning

confidence: 99%

See 1 more Smart Citation

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation

Teraji

Yamamoto

Watanabe

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

With optical/electronic devices of the next generation in mind, we provide a guideline for the growth of homoepitaxial diamond films that possess higher crystalline quality, higher chemical purity, and a higher carbon isotopic ratio. A custombuilt microwave plasma-assisted chemical vapor deposition system was constructed to achieve these requirements. To improve both the purity and crystalline quality of homoepitaxial diamond films, an advanced growth condition was applied: higher oxygen concentration in the growth ambient. Under this growth condition for high-quality diamond, a thick diamond film of !30 mm was deposited reproducibly while maintaining high purity and a flat surface. Then, combining this advanced growth condition for non-doped diamond with a unique doping technique that provides parts-per-billion order doping, single-color centers of either nitrogen-vacancy or silicon-vacancy centers that show excellent properties were formed. The new idea of using these color centers as a probe for detecting tiny amounts of impurities was presented. These advanced growth and characterization techniques are expected to open up new fields of diamond research that require extremely low-impurity concentration, for use in power devices and quantum information devices.

show abstract

Chemical Vapor Deposition of Homoepitaxial Diamond Films

Teraji

2008

Physics and Applications of CVD Diamond

View full text Add to dashboard Cite

The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD

Cited by 158 publications

References 40 publications

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation

Chemical Vapor Deposition of Homoepitaxial Diamond Films

Contact Info

Product

Resources

About