The effect of oxygen incorporation in sputtered scandium nitride films

Moram, M. A.; Barber, Z. H.; Humphreys, C. J.

doi:10.1016/j.tsf.2008.05.050

Cited by 77 publications

(60 citation statements)

References 27 publications

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“…As mentioned in Ref. 30, the affinity of O to ScN is high in comparison to other TM nitrides, which is supported by these observations. Also, the films with high amounts of O exhibit a significantly higher concentration of C and H impurities, which supports the idea of postgrowth indiffusion along grain boundaries under atmospheric conditions.…”

Section: Resultssupporting

confidence: 85%

“…[20][21][22][23] Experimentally the synthesis of c-ScN as thin films is reported with different techniques including reactive magnetron sputter epitaxy ͑MSE͒, 27 radio frequency molecular beam epitaxy, 28 and chemical vapor deposition. 29 Moram et al 30 showed that ScN has a high affinity to oxygen compared to other TM nitrides. High amounts of impurities are probably the reason for the variation in the experimentally measured properties and their variation from theoretical predictions.…”

Section: Introductionmentioning

confidence: 99%

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Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Höglund

Bareño

Birch

et al. 2009

Journal of Applied Physics

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Reactive magnetron sputter epitaxy was used to deposit thin solid films of Sc1−xAlxN (0≤x≤1) onto MgO(111) substrates with ScN(111) seed layers. Stoichiometric films were deposited from elemental Sc and Al targets at substrate temperatures of 600 °C. The films were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, x-ray diffraction, and transmission electron microscopy. Results show that rocksalt structure (c)-Sc1−xAlxN solid solutions with AlN molar fractions up to ∼60% can be synthesized. For higher AlN contents, the system phase separates into c- and wurtzite structure (w)-Sc1−xAlxN domains. The w-domains are present in three different orientations relative to the seed layer, namely, Sc1−xAlxN(0001)∥ScN(111) with Sc1−xAlxN[1¯21¯0]∥ScN[11¯0], Sc1−xAlxN(101¯1)∥ScN(111) with Sc1−xAlxN[1¯21¯0]∥ScN[11¯0], and Sc1−xAlxN(101¯1)‖ScN(113). The results are compared to first-principles density functional theory calculations for the mixing enthalpies of c-, w-, and zinc blende Sc0.50Al0.50N solid solutions, yielding metastability with respect to phase separation for all temperatures below the melting points of AlN and ScN.

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Section: Resultssupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Höglund

Bareño

Birch

et al. 2009

Journal of Applied Physics

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“…For electrical properties, theoretical studies reported that ScN is an indirect semiconductor with energy gap in the range of 0.9-1.6 eV. [5][6][7][8][9] Measurements on as-deposited ScN show n-type behavior, 10,11 and the carrier concentration of ScN has been reported to vary from 10 18 to 10 22 cm À3 with electron mobility of 100-180 cm 2 V À1 s À1 . 9,[12][13][14] These numbers of the carrier concentrations span the typical ideal range for thermoelectrics 1 while retaining a high carrier mobility; 13 a fact relevant to their thermoelectric power factor reported here.…”

mentioning

confidence: 99%

Anomalously high thermoelectric power factor in epitaxial ScN thin films

Kerdsongpanya

Nong

Pryds

et al. 2011

Applied Physics Letters

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Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (similar to 1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of similar to 2.94 mu Omega m, while its Seebeck coefficient is approximately similar to-86 mu V/K at 800 K, yielding a power factor of similar to 2.5 x 10(-3) W/mK(2). This value is anomalously high for common transition-metal nitrides.Funding Agencies|Swedish Research Council (VR)|621-2009-5258

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“…ScN is an indirect gap semiconductor with the rock-salt structure and has been of interest recently for thermoelectric device applications [25][26][27][28][29][30]. ScN-based interlayers are also of use as dislocation-blocking layers in the growth of epitaxial GaN films [31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Composition measurement of epitaxial Sc_xGa_1−xN films

Tsui

Goff

Barradas

et al. 2016

Semicond. Sci. Technol.

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Four different methods for measuring the compositions of epitaxial Sc x Ga 1-x N films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial Sc x Ga 1-x N films with 0 ≤ x ≤ 0.26 were measured directly using Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from X-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.

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The effect of oxygen incorporation in sputtered scandium nitride films

Cited by 77 publications

References 27 publications

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Anomalously high thermoelectric power factor in epitaxial ScN thin films

Composition measurement of epitaxial Sc_xGa_1−xN films

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The effect of oxygen incorporation in sputtered scandium nitride films

Cited by 77 publications

References 27 publications

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Anomalously high thermoelectric power factor in epitaxial ScN thin films

Composition measurement of epitaxial ScxGa1−xN films

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Composition measurement of epitaxial Sc_xGa_1−xN films