The effect of oxygen on the ZnS electronic energy-band structure

Morozova, N. K.; Каретников, И. А.; Golub, K. V.; Danilevich, N. D.; Лисицын, В. М.; Олешко, В. И.

doi:10.1134/1.1923552

Cited by 18 publications

(17 citation statements)

References 6 publications

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“…Note that these bands may be caused by several types of centers of copper emission [8][9][10] as well as by centers of oxygen [8,11] and self-activated radiation [9][10][11]. To date, the nature of the luminescence centers, causing the blue and green bands of Cu in ZnS, is well studied [8][9][10][11][12][13]. In the works [11][12][13][14][15], it is shown that the center of the green glow of copper with λ max ~ 505…535 nm is isolated copper ion, replacing zinc ion in the ZnS lattice.…”

Section: Resultsmentioning

confidence: 99%

“…To date, the nature of the luminescence centers, causing the blue and green bands of Cu in ZnS, is well studied [8][9][10][11][12][13]. In the works [11][12][13][14][15], it is shown that the center of the green glow of copper with λ max ~ 505…535 nm is isolated copper ion, replacing zinc ion in the ZnS lattice. The blue band with λ max ~ 450…465 nm is related to formation of associates like to the close DA-pair Cu i -Cu Zn [16].…”

Section: Resultsmentioning

confidence: 99%

“…Possibly, the presence of a fluxing agent leads to increasing the partial pressure of Cl [17], which increases the solubility of copper in the basis of luminophore and results in additional association of copper ions and formation of centers like to the close DA-pair Cu i -Cu Zn and, accordingly, to combusting of PL blue band. Effect of Cl, as a co-activator, on the spectral composition and PL intensity is related with necessity to compensate charge of internal defects in material, which is in sufficiently details described in the works [8][9][10][11][12][13][14]. In [14], it has shown that even a small amount of the Cl impurity in ZnS conduces introduction of copper into the sites of Zn sublattice, or filling the Zn vacancies, which leads to an increase in contribution of the green band to luminescence.…”

Section: Resultsmentioning

confidence: 99%

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Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis

Gilchuk¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and MgCl 2 as a fluxing agent into the charge and without them. It was shown that increasing the amount of fraction with the particle sizes ≤5 nm in powdered ZnS:Cu-SHS, where fluxing agents are present in the charge, is caused by the decrease in temperature inside the reactor in the course of the synthesis reaction. Besides, related increasing the intensity of the PL blue band with λ max ~ 450…465 nm in powdered ZnS:Cu-SHS/MgCl 2 , which is associated with redistribution of the copper impurity in the bulk of microcrystals, probably, occurring as a result of increasing the partial pressure of Cl during synthesis.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis

Gilchuk¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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“…For such substitutional impurities, which introduce appreciable local distortions into the lattice, implies a strong interaction between the localized impurity states and extended states in the conduction band. As a result of presences oxygen in PbS, even a small amount of an isoelectronic impurity gives rise to a splitting of the conduction band into two noncrossing subbands 42 . One of these subbands is formed of highly localized impurity states E + , while the second subband is formed of extended conduction-band states E − that experience the effect of the narrow resonance band introduced by the isoelectronic impurity.…”

Section: A Spectral Characteristics Of Pb-s-omentioning

confidence: 99%

Spectral characteristics and morphology of nanostructured Pb–S–O thin films synthesized via two different methods

Mohamed

Abdel-Hafiez

Miroshnikov

et al. 2014

Materials Science in Semiconductor Processing

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Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime (10 −9 ). We investigated the morphology of the obtained PbS films using various techniques i.e.AFM, SEM, EDAX, AES and HRTEM . In the case of CVD, we found that the surface consists of grains with dimensions in the plane (diameter to 300 nm and height up to 200 nm), while the same order of the grain size has been observed for PVD. On the other hand, SEM investigation reveals that the PbS particles with various morphologies of both films have uniform and the particle size distribution. Small amount of Sodium was obtained from EDXS studies, which is may originate from the substrate where the deposition process has been produced at temperature 550-600• C and for CVD at minimum accelerating voltage 5 kV silicon are presented in the spectrum, which means that the region for X-ray generation voltage data exceeds the thickness of the films (where the thickness of films about 0.4 micron). AES confirm that the surface layer of these films (PVD) containing carbon and oxygen and it has a thickness of 0.1µm. At a depth of 1.3 microns in films these elements is again increased, which corresponds to the film thickness of 1.5 µm. Layers of PVD films are seen by HRTEM and the studies confirm that oxygen-layer located on top of the structure, while the layers of CVD films have not only the oxygen along the crystallite boundaries, but also accumulate in the depth of the boundary with the substrate. Our results of morphology indicate that changing in spectral characteristics of films deposited by (CVD and PVD) is related to the structure and crystalline size.

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“…Earlier, in the series of works [4][5][6][7][8][9][10] an analysis of the luminescence spectra of (ZnS•ZnSe)•O, based on the BAC theory, was presented. For (ZnS•ZnSe)•O it was discovered, that the anomalies in the absorption spectra and in the self-activated luminescence spectra become apparent with an increase in the concentration of dissolved oxygen.…”

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confidence: 99%

Self‐activated luminescence spectra of CdS(O) in the context of the band anticrossing theory

Morozova

Danilevich

Kanakhin

2010

Phys. Status Solidi (c)

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This work proposes an interpretation of self‐activated luminescence in CdS(O), based on the band anticrossing theory, which takes into account the influence of an oxygen isoelectronic impurity on the band structure. Analogous to ZnS‐ZnSe(O), two luminescence bands were discovered in CdS(O), which we named SA and SAL. It was found, that in the presence of dissolved oxygen the SA luminescence consists of two supplementary H and L components. They owe existence to the transitions from E+and E– subbands of the bifid conduction band in CdS(O) to the recombination level of SA luminescence. Their spectral dependence on the concentration of the dissolved oxygen was estimated. SAL self‐activated luminescence in CdS(O) doesn't contain H component, which lies into the fundamental absorption area of the crystal. The structure of SA and SAL centres of luminescence has shown their equivalence to the respective centres in ZnS(ZnSe). In the work we present the position of the localized level of oxygen E0, the band gap Eg versus the dissolved oxygen concentration as well as the general band model of CdS(O). This study supplements the analogous research, performed earlier for ZnS‐ZnSe(O). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The effect of oxygen on the ZnS electronic energy-band structure

Cited by 18 publications

References 6 publications

Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis

Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis

Spectral characteristics and morphology of nanostructured Pb–S–O thin films synthesized via two different methods

Self‐activated luminescence spectra of CdS(O) in the context of the band anticrossing theory

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