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Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime (10 −9 ). We investigated the morphology of the obtained PbS films using various techniques i.e.AFM, SEM, EDAX, AES and HRTEM . In the case of CVD, we found that the surface consists of grains with dimensions in the plane (diameter to 300 nm and height up to 200 nm), while the same order of the grain size has been observed for PVD. On the other hand, SEM investigation reveals that the PbS particles with various morphologies of both films have uniform and the particle size distribution. Small amount of Sodium was obtained from EDXS studies, which is may originate from the substrate where the deposition process has been produced at temperature 550-600• C and for CVD at minimum accelerating voltage 5 kV silicon are presented in the spectrum, which means that the region for X-ray generation voltage data exceeds the thickness of the films (where the thickness of films about 0.4 micron). AES confirm that the surface layer of these films (PVD) containing carbon and oxygen and it has a thickness of 0.1µm. At a depth of 1.3 microns in films these elements is again increased, which corresponds to the film thickness of 1.5 µm. Layers of PVD films are seen by HRTEM and the studies confirm that oxygen-layer located on top of the structure, while the layers of CVD films have not only the oxygen along the crystallite boundaries, but also accumulate in the depth of the boundary with the substrate. Our results of morphology indicate that changing in spectral characteristics of films deposited by (CVD and PVD) is related to the structure and crystalline size.

Влияние кислорода на электрические свойства PbS широко известно. Целью данной работы было сопоставление и обнаружение этого явления в монокристаллах CdS(О), детально исследованных нами ранее. Эксперименты проведены на монокристаллах CdS с известной концентрацией кислорода, отклонением от стехиометрии и определенным набором собственных точечных дефектов. Они позволили подтвердить результаты, описанные для PbS, и выяснить их природу. Показано, что в основе явления лежит захват свободных носителей-электронов на акцептороподобных изоэлектронных центрах O S с последующим образованием ассоциатов сложной структуры. Подтверждены предшествующие выводы о механизме растворения кислорода в CdS с отклонениями от стехиометрии. Изменения электрических свойств в активированном кислородом PbS(О), как и в CdS(О), показали, что изоэлектронные кислородные центры O S присутствуют в сульфиде свинца.

The results are presented of the simulation of the spectral characteristics of the polycrystalline photosensitive elements based on the lead sulphide. The possible reasons for the experimental data discrepancy are discussed.

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