Noise of PbS-based semiconductor photoresistors

Мирошникова, И. Н.; Komissarov, A.; Miroshnikov, B. N.

doi:10.1007/s11018-010-9551-5

Cited by 10 publications

(7 citation statements)

References 7 publications

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“…The contributions of chemical groups to the molecular interaction for the corresponding increments are given in the tables of Small, Hoy, or van Krevelen [20].…”

Section: Methodsmentioning

confidence: 99%

Biodegradable blends obtained via reactive blending of polylactide and polyamide-6

et al. 2016

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Blends of polyamide-6 and polylactide are prepared via reactive compatibilization. Their phase morphologies and compositions are characterized by the methods of IR spectroscopy, optical and scanning electron microscopy, NMR, dynamic mechanical analysis, and continuous extraction in a boiling solvent. It is shown that the formation of hydrogen bonds between polylactide and polyamide-6 substantially improves the compatibility of components. A large proportion of a copolymer is formed as a result of interchain exchange between polyamide-6 and polylactide molecules. The results open new possibilities to produce commercially attractive biodegradable materials with high mechanical and thermophysical characteristics.

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“…The contributions of chemical groups to the molecular interaction for the corresponding increments are given in the tables of Small, Hoy, or van Krevelen [20].…”

Section: Methodsmentioning

confidence: 99%

Biodegradable blends obtained via reactive blending of polylactide and polyamide-6

et al. 2016

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“…[ 5–8 ] Another merit of LDRs can be attributed to extremely low power consumptions because the electrical resistance of LDRs is very high (very low current flow) in the dark condition but only reduced (increased current flow) upon light illumination due to the photogenerated charges. [ 9–11 ]…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7][8] Another merit of LDRs can be attributed to extremely low power consumptions because the electrical resistance of LDRs is very high (very low current flow) in the dark condition but only reduced (increased current flow) upon light illumination due to the photogenerated charges. [9][10][11] Conventional LDRs have been manufactured with inorganic materials such as cadmium sulfide (CdS), zinc selenide (ZnSe), germanium (Ge), etc. [12][13][14] However, the inorganic LDRs require high temperature processes, for example, %500 C for the CdS-and ZnSe-based LDRs and %400 C for Ge nanowire-based LDRs.…”

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confidence: 99%

Near Infrared Light‐Sensing Organic Light‐Dependent Resistors Based on Dialkoxybenzothiadiazole‐Containing Conjugated Polymer

Cho

Lee

Kim

et al. 2022

Physica Status Solidi (a)

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Herein, near infrared light‐sensing organic light‐dependent resistors (NIR–OLDRs) is reported, that are fabricated with a planar geometry by employing poly[{3‐(5‐(7‐methyl‐5,6‐bis(octyloxy)benzo[c][1,2,5]thiadiazol‐4‐yl)thiophen‐2‐yl)‐6‐(5‐methylthiophen‐2‐yl)}‐co‐{2,5‐bis(2‐octyldodecyl)‐2,5‐dihydropyrrolo[3,4‐c]pyrrole‐1,4‐dione}] (PDPP‐8OBT) as an active layer. The PDPP‐8OBT polymer, which is synthesized by the Stille coupling reaction of corresponding monomers, shows a broad absorption up to ≈1000 nm (wavelength) and good thermal stability with a glass transition temperature of >200 °C. A high‐power laser diode, which emits a monochromatic NIR light (wavelength = 905 nm) for light detection and ranging (LiDAR) systems, is used to examine the characteristics of NIR–OLDRs. Results show that the present NIR–OLDRs can successfully detect the 905 nm NIR light and their electrical resistance (and photocurrent) is sensitive to the incident intensity of NIR light. In particular, for both regular and semitransparent devices, the best NIR light‐sensing performances are achieved by device annealing at 150 °C (change of resistance = 34.5%) due to the increased crystallinity of PDPP‐8OBT films. The present NIR–OLDRs exhibit excellent sensing stability upon optical on/off modulations of NIR light (905 nm).

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“…Lead sulphide (PbS) is a direct narrow band gap IV-VI semiconductor (E g ≈0.41 at 300 K for bulk crystal) (Banerjee, 2019). The electrical and optoelectronic properties of PbS nanostructures and thin films are studied extensively time to time and subsequently employed in different semiconductor devices, namely the infrared detector (Ghamsari et al, 2006), solar cell (Gunes et al, 2007), Pb 2+ ion selective sensors (Hirata and Higashiyama, 1971), photo-resistor (Miroshnikova, 2010), humidity and temperature sensors (Pop et al, 1997;Seghaier et al, 2006). In the present work, the photon wavelength dependent photosensitivity of the Al/PbS/ITO M-S-M structure is investigated considering back-toback Schottky barrier diode model.…”

Section: Introductionmentioning

confidence: 99%

Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

Banerjee¹

2020

IJERR

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The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.

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Noise of PbS-based semiconductor photoresistors

Cited by 10 publications

References 7 publications

Biodegradable blends obtained via reactive blending of polylactide and polyamide-6

Biodegradable blends obtained via reactive blending of polylactide and polyamide-6

Near Infrared Light‐Sensing Organic Light‐Dependent Resistors Based on Dialkoxybenzothiadiazole‐Containing Conjugated Polymer

Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

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