2016
DOI: 10.1016/j.tsf.2016.10.044
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The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications

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Cited by 14 publications
(6 citation statements)
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“…In general, three polymorphs are known for ZrO 2 : monoclinic (<1170 • C), tetragonal (1170-2370 • C), and cubic (>2370 • C) [5]. ZrO 2 is a widely studied material, due to its special properties, such as a wide ban gap (5.1-7.8 eV) [6], a dielectric constant (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25) [7,8], good mechanical strength [9], high thermal expansion coefficient [10], and excellent hydrophilic properties [11].…”
Section: Introductionmentioning
confidence: 99%
“…In general, three polymorphs are known for ZrO 2 : monoclinic (<1170 • C), tetragonal (1170-2370 • C), and cubic (>2370 • C) [5]. ZrO 2 is a widely studied material, due to its special properties, such as a wide ban gap (5.1-7.8 eV) [6], a dielectric constant (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25) [7,8], good mechanical strength [9], high thermal expansion coefficient [10], and excellent hydrophilic properties [11].…”
Section: Introductionmentioning
confidence: 99%
“…The oxygen peak at 531.5 eV was assigned to the surface oxygen (denoted as O I in figure 1(c)) and the oxygen peak at 529.7 eV was assigned to the lattice oxygen (denoted as O II in figure 1(c)) [23]. Due to the non-stoichiometric nature of the ZrO 2 ALD, the ZrO 2 ALD contained weak (hydroxyls), medium (metal-oxygen pair), and strong basic sites (oxygen vacancy defect) due to the surface oxygen species [24,25], whereas the main oxygen species for CZA was reported as weak basic sites (hydroxyl group) [26]. From the O 1s peak signal in figure 1(c), both the lattice oxygen and the surface oxygen increased, as compared to the fresh CZA catalyst.…”
Section: Resultsmentioning
confidence: 99%
“…[10] Recently, it was reported that tetragonal ZrO 2 could be deposited at temperatures below 400 °C using atomic layer deposition (ALD). [11][12][13] ALD technology is suitable for DRAM capacitor deposition due to superior uniformity, excellent conformity, and atomic-scale controllability. Various precursors have been proposed for high-k ZrO 2 thin-film ALD; Cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe 2 ) 3 ) precursor has high thermal stability and high growth rate, and many studies are being conducted.…”
Section: Introductionmentioning
confidence: 99%