The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS

Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

“…Considering the aforementioned results on SIMOX SOI layers wherein the deep levels are completely annealed out when the annealing temperature is higher than 1250ЊC, [5][6][7] the observations in this work are rather contradictory. However, it should be noted that there are big differences in the sample structure and thermal cycles involved after oxygen implantation when compared to the previous works.…”

“…5 Chen and Li also observed a similar deep level at E c Ϫ0.31 eV for a 1150ЊC annealed sample, and this deep level disappeared at an annealing temperature of 1250ЊC. 6 The effects of oxidation on deep levels in a thick, epitaxially grown SIMOX SOI layer were also investigated by McLarty et al 7 The SIMOX SOI sample was oxidized after high-temperature annealing at 1150ЊC, and they observed two deep levels at E c Ϫ 0.33 and Ϫ0.45 eV. For a thick, epitaxially grown SIMOX SOI layer, it is very difficult to measure deep levels in the original, thin (<0.2 m) SIMOX SOI layer by the deep-level transient spectroscopy (DLTS) method, because the depletion layer for DLTS measurement is formed in the epitaxial layer.…”

“…The high-temperature annealing behaviors of deep levels in the SIMOX SOI layer have been studied in previous research. [5][6][7][8][9] At annealing temperatures higher than 1300ЊC, it has been reported that the physical defects, which could be associated with deep levels in the SOI layer, completely disappeared. However, most research investigated deep levels in thick (>0.4 m) epitaxially grown SIMOX SOI layers.…”