The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon

Abstract

High-power arc lamp design has enabled ultrahigh-temperature ͑UHT͒ annealing as an alternative to conventional rapid thermal processing ͑RTP͒ for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion ͑TED͒, which is typically observed during postimplant thermal processing. In this study, two 200-mm ͑100͒ n-type Czochralski-grown Si wafers were preamorphized with either a 48-or a 5-keV Ge + implant to 5 ϫ 10 14 cm 2 , and subsequently implanted with 3-keV BF 2 + molecular ions to 6 ϫ 10 14 cm 2 . The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is to show that the UHT annealing technique is capable of producing a highly activated p-type source/drain extension without being subjected to TED only when the preamorphization implant is sufficiently deep.

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

“…With silicon as the substrate, it has been difficult to form ultra-shallow junctions on the silicon surface by the traditional ion implantation doping process. This is because the physical bombardment of accelerated ions turns the single-crystalline silicon surface (about 10 nm thick) into low quality amorphous silicon, resulting in significant degradation in the device performances 8 . In recent years, doping by self-assembled monolayers (SAMs) has proven to be a mild and controllable doping process 9 10 .…”

Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates

“…Really, an increase in the "tail" extension occurs during subsequent thermal treatments of preamorphized silicon layers that were implanted with boron ions 23,27,31,32 . In the investigations carried out by 15,22,28,33 clearly identified "tails" after boron implantation were not observed. However, such "tails" were formed in the course of the subsequent annealing.…”

Advancement of CMOS Doping Technology in an External Development Framework

“…Table 1 lists a range of activities related to ion implantation and annealing, showing in each case, the purpose and benefits. It has been shown previously that B is prone to rapid concentration-enhanced diffusion in the amorphous phase [10]. Figure 2 shows the results of a study of the effect of two amorphization schemes, In and Ge, and annealing treatments on B profiles produced by carborane ion implantation.…”