The effect of release-etch holes on the electromechanical behaviour of MEMS structures

Rabinovich, V. L.; Gupta, Raj K.; Senturia, S.D.

doi:10.1109/sensor.1997.635400

Cited by 42 publications

(24 citation statements)

References 5 publications

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“…The data is curve fit to the analytical model in (6). Due to the small offset and sidewall angle, only is extracted, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…To test this extraction strategy, simulation data obtained from the 3-D FEM for arbitrarily input and and zero residual stress ( equals one) are fit to the predictive model in (6). All other dimensions and material properties for both models are obtained from nominal values.…”

Section: Test Structure Design and Extraction Methodologymentioning

confidence: 99%

“…The measure of gaseous slip flow in long microchannels was "extremely sensitive" to channel height [4]. Similarly, critical damping and electrostatic behavior of perforated proof masses in accelerometers can be highly dependent on etch-hole dimensions [5], [6]. The resolution of certain gyroscopes fabricated by the Bosch process were up to fourth-power sensitive to trench geometry [7].…”

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confidence: 99%

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Electronically probed measurements of MEMS geometries

Gupta

2000

J. Microelectromech. Syst.

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“…The data is curve fit to the analytical model in (6). Due to the small offset and sidewall angle, only is extracted, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Test Structure Design and Extraction Methodologymentioning

confidence: 99%

mentioning

confidence: 99%

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Electronically probed measurements of MEMS geometries

Gupta

2000

J. Microelectromech. Syst.

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“…Literature definitions [8,11,12], are generally accepted for analytically describing the effect of the holes by means of the pitch, i.e. the center-to-center distance p between the holes and the edge-to-edge distance l. The situation is explained in the Fig.…”

Section: Numerical and Experimental Considerationsmentioning

confidence: 99%

Modulation instability in RF MEMS devices

Marcelli

Bartolucci

Angelis

et al. 2012

Analog Integr Circ Sig Process

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Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than −40 dB the spectral purity of microwave sources

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“…In the case of aluminum membranes, this stress is a function of the temperature history of the membrane as it undergoes inelastic deformation at elevated temperatures during sacrificial layer removal [7]. However, the presence of release holes in the membrane tends to allow stress relaxation of the residual stress [8] making the released stress significantly lower. In addition, developers of MEMS devices commonly incorporate three dimensional features into the membrane [9] to reduce the final stress of the membrane.…”

Section: A(t)=aae[t Ls -T]mentioning

confidence: 99%

Temperature Variation of Actuation Voltage in Capacitive MEMS Switches

Goldsmith¹,

Forehand²

2005

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Approved for public release; distribution is unlimited. STINFO FINAL REPORTThis work, resulting from Department of the Air Force contract number F33615-03-C-7003, has been submitted to IEEE for publication in the IEEE Microwave and Wireless Components Letters. If, published, IEEE may assert copyright. If so, the United States has for itself and others acting on its behalf an unlimited, paid-up, nonexclusive, irrevocable worldwide license. Any other form of use is subject to copyright restrictions. SENSORS DIRECTORATE AIR FORCE RESEARCH LABORATORY AIR FORCE MATERIEL COMMAND WRIGHT-PATTERSON AIR FORCE BASE, OH 45433-7320 NOTICEUsing Government drawings, specifications, or other data included in this document for any purpose other than Government procurement does not in any way obligate the U.S. Government. The fact that the Government formulated or supplied the drawings, specifications, or other data does not license the holder or any other person or corporation; or convey any rights or permission to manufacture, use, or sell any patented invention that may relate to them. This report has been reviewed and is releasable to the National Technical Information Service (NTIS). It will be available to the general public, including foreign nationals. The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YY)2 SPONSORING/MONITORING AGENCY REPORT NUMBER(S) AFRL-SN-WP-TP-2005-101 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTESReport contains color. This work, resulting from Department of the Air Force contract number F33615-03-C-7003, has been submitted to IEEE for publication in the IEEE Microwave and Wireless Components Letters. If, published, IEEE may assert copyright. If so, the United States has for itself and others acting on its behalf an unlimited, paid-up, nonexclusive, irrevocable worldwide license. Any other form of use is subject to copyright restrictions. ABSTRACTA simple theoretical model for temperature variation of actuation voltage for fixed-fixed beam switches is developed and applied to model capacitive RF MEMS switches. Measured data from the...

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The effect of release-etch holes on the electromechanical behaviour of MEMS structures

Cited by 42 publications

References 5 publications

Electronically probed measurements of MEMS geometries

Electronically probed measurements of MEMS geometries

Modulation instability in RF MEMS devices

Temperature Variation of Actuation Voltage in Capacitive MEMS Switches

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