The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics

Karimi, Fa.; Orouji, Ali A.

doi:10.1007/s10825-018-1155-3

Cited by 2 publications

(3 citation statements)

References 26 publications

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“…exhibit the same trends, as shown in figures 3(b) and (c). This is in agreement with the previous studies [28,29]. Due to the better gate control of the narrow sample, the electric field of the pinch-off region is stronger.…”

Section: Resultssupporting

confidence: 93%

“…The information of TCAD simulation is following. In addition, the electric field simulation result of HCS shows that the narrow sample has a stronger transverse electric field in figure 4(c), the same as was found by a previous [28,29]. Therefore, the gate control is also not the reason behind the abnormal trend of HCD and fin shape in short channel devices.…”

Section: Resultssupporting

confidence: 77%

“…Although there are more interface traps due to the critical process condition in the narrow sample, the S.S. and DIBL are better because of its excellent gate control. The HCD trend in the long channel devices is general and is similar to those in [27,28,37]. That is to say, the narrower the bottom width, the more severe the HCD.…”

Section: Discussionsupporting

confidence: 61%

See 2 more Smart Citations

Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node

Kuo¹,

Chen²,

Chang³

et al. 2022

Semicond. Sci. Technol.

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This study investigates the impact of fin profiles under hot carrier stress, which defines different base widths: wide-base samples with the smallest slope, medium-base samples, and narrow-base samples with a larger slope. The performance of the narrow samples is better than the medium samples, regardless of transconductance, on-state current, subthreshold swing or drain-induced barrier lowering, demonstrating that the narrow profile samples’ mobility and gate control are better. In long channel devices, the trend of hot carrier degradation (HCD) is in agreement with previous references, and is dependent on the transverse electric field and the fin shapes. However, this trend does not exist for short-channel devices. Positive bias stress and technology computer aided design simulation are applied for investigation and to clarify the reasons for this abnormal HCD trend. Finally, by fitting the multiple vibrational excitation (MVE) mechanism, the slope of the trend lines in the short channel devices are found to indeed match the bending mode. In other words, the disappearance of the general trend between the HCD and fin profiles is caused by the change in the mechanism in the short-channel device. Because the MVE mechanism is independent from the electric field, the narrow profile fin shape more effectively promotes gate control and better performance without affecting the reliability in short channel devices. These results can provide a clear direction for fin shape designers in the future.

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Section: Resultssupporting

confidence: 93%

Section: Resultssupporting

confidence: 77%