The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment

“…Among the three peaks, peak I corresponds to the chemical bond of Si-Si, originating from Si substrate [18]. Peak II and III, corresponding to La-O-Si and Si-O-Si respectively, are likely present due to the existence of SiO x and La-silicate which are the main components of interfacial layer (IL) between La x Al y O film and Si substrate [19]. For both La-O-Si and Si-O-Si peaks, the difference of the intensity between Figure 2a and Figure 2b is negligible, which indicates the SRPO pretreatment has almost no impact on the amount of La-O-Si and Si-O-Si chemical bonds.…”

Effects of the Interfacial Layer on Electrical Properties of TiO2-based High-k Dielectric Composite Films

“…Although the research on ATA structure has been performed, the effects of the interfacial layer on the electrical properties of TiO 2 -based dielectric composite thin film have not been studied. In this work, the effects of the interfacial layer on electrical properties in the X/ 4 , and La(iPrCp) 3 were used as a Al, Ti and La precursor, respectively. H 2 O was also used as a reactant for Al 2 O 3 , TiO 2 and HfO 2 thin films.…”

“…High-k dielectric thin films such as HfO 2 , ZrO 2 , TiO 2 , La 2 O 3 , and Al 2 O 3 have been investigated to replace SiO 2 thin film for the gate dielectric layer in the MOSFET (1)(2)(3)(4)(5). Among them, many researchers have focused TiO 2 thin film as an attractive candidate to replace SiO 2 thin film because of its high dielectric constant (40-80).…”

Advanced CMOS Gate Stack: Present Research Progress

“…By using high-concentration ozone oxidation at low temperature, the Hf-silicate interface layer between HfO 2 and silicon substrate is effectively controlled [47]. Thermal stability, interfacial structure if amorphous (La 2 O 3 ) 0.5 (SiO 2 ) 0.5 (LSO) films deposited by using pulsed deposition on Si, and NH 3 -nitrided Si substrates are comparatively researched [31]. The LSO films keep the amorphous state up to a high annealing temperature of 900…”

“…Among rare earth oxides, La 2 O 3 is attractive due to its highest dielectric constant, but it is chemically unstable, as lanthanum hydroxide and carbonate are formed with exposure to ambient atmosphere, resulting in the unwanted flat band voltage shifts. The electrical properties of amorphous (La 2 O 3 ) 0.5 (SiO 2 ) 0.5 films deposited by using pulsed deposition on Si and NH 3 -nitrided Si substrates are comparatively investigated [31]. Rare earth oxides M 2 O 3 (M = Sc, Y, La, Gd, Pr, Lu, etc.)…”