The effect of stochastic nano-scale surface roughness on microfluidic flow in computational microchannels

Jaeger, Robert J.

doi:10.31274/etd-180810-2412

Cited by 2 publications

(1 citation statement)

References 63 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For visible light optical applications, typically a root mean square (RMS) surface roughness below 9 nm on the NIL master is considered as acceptable for practical applications [20]. For the microfluidic system studied in [21], an increase in RMS roughnesses from 1.0 to 19.8 nm was found to impact flow velocity by one order of magnitude and a RMS roughness far below 20 nm was required to avoid this effect. The surface roughness obtained with the Ga implantation and RIE has, up to now, disqualified it for the manufacture of NIL templates for both optical and microfluidic applications with homogeneous flow velocities.…”

Section: Introductionmentioning

confidence: 99%

Generation of 3D nanopatterns with smooth surfaces

Waid¹,

Wanzenboeck²,

Mühlberger³

et al. 2014

Nanotechnology

View full text Add to dashboard Cite

Ga implantation into Si and reactive ion etching has been previously identified as candidate techniques for the generation of 3D nanopatterns. However, the structures manufactured using these techniques exhibited impedingly high surface roughness. In this work, we investigate the source of roughness and introduce a new patterning process to solve this issue. The novel patterning process introduces an additional layer absorbing the implanted Ga, thus preventing the clustering of the implanted Ga observed with uncoated Si substrates. This process enables 3D nanopatterning with sub-100 nm lateral resolution in conjunction with smooth height transitions and surface roughness down to 4 nm root mean square. Such patterns are ideally suited for optical applications and enable the manufacturing of nanoimprint lithography templates for low-profile Fresnel lenses.

show abstract

Section: Introductionmentioning

confidence: 99%