The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances

Han, Runhao; Hong, Peizhen; Ning, Shuai; Xu, Qing; Bai, Mingkai; Zhou, Jing; Li, Kaiyi; Liu, Fei; Shi, Feng; Luo, Feng; Huo, Zongliang

doi:10.1063/5.0146998

Cited by 12 publications

(6 citation statements)

References 136 publications

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“…60 Furthermore, the interfacial layer growth may also contribute to the strain relaxation. 58 Further details on impedance spectroscopy and BBXRD can be found in the Supporting Information (Sections S1 and S2).…”

Section: Resultsmentioning

confidence: 99%

“…The biaxial in-plane strain and stress in 10 nm ZrO 2 films are determined with Bragg–Brentano X-ray diffraction and the sin 2 Ψ method . The in-plane tensile strain is mainly attributed to intrinsic and extrinsic sources. , Various factors can influence the intrinsic stress during film growth, including point defects, lattice mismatch, grain growth, etc. The extrinsic stress can come from the difference in the coefficient of thermal expansion (CTE) between the thin film and the substrate or electrode.…”

Section: Resultsmentioning

confidence: 99%

“…The extrinsic stress can come from the difference in the coefficient of thermal expansion (CTE) between the thin film and the substrate or electrode. Since the commonly reported CTE of ZrO 2 is larger than that of TiN or Si, a smaller in-plane tensile strain is expected when the deposition temperature decreases. Therefore, in this work, the higher in-plane tensile strain and stress observed in ZrO 2 deposited at lower temperatures is likely from intrinsic strain which compensates for the decreases in extrinsic strain.…”

Section: Resultsmentioning

confidence: 99%

“…It can be caused by film densification, or increased residual carbon content during the ALD process . Furthermore, the interfacial layer growth may also contribute to the strain relaxation . Further details on impedance spectroscopy and BBXRD can be found in the Supporting Information (Sections S1 and S2).…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Xu,

Ganser,

Holsgrove

et al. 2024

ACS Appl. Mater. Interfaces

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Xu,

Ganser,

Holsgrove

et al. 2024

ACS Appl. Mater. Interfaces

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“…Therefore, hafniumbased ferroelectric memory devices need to have an optimized material distribution to be commercially viable. Stress, a key factor in the formation of hafnium-based ferroelectric materials, 19 promises to be an effective means of controlling the distributions of ferroelectric materials.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of HfO2-based ferroelectric with 3D cylindrical capacitor stress optimization

Li,

Xia,

Fan

et al. 2024

Journal of Applied Physics

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To meet commercialization requirements, the distributions of materials in hafnium-based ferroelectric devices—including their phase and orientation—need to be controlled. This article presents a method for improving the ferroelectric phase ratio and orientation by adjusting the stress distribution of the annealing structure in a three-dimensional capacitor. In such a structure, stress can be applied in three directions: tangential, axial, and radial; there are, thus, more ways to regulate stress in three-dimensional structures than in two-dimensional structures. This work sought to clarify the role of the stress direction on the proportions and orientations of ferroelectric phases. The results of stress simulations show that a structure with an internal TiN electrode, but no filling provides greater axial and tangential stresses in the hafnium-oxide layer. In comparison with the case of the hole being filled with tungsten, the proportion of the O phase is increased by approximately 20%, and in experiments, the projection of the polarization direction onto the normal was found to be increased by 5%. Axial and tangential stresses are regarded to be beneficial for the formation of the O phase and for improving the orientation of the polarization direction. This work provides a theoretical basis and guidance for the three-dimensional integration of hafnium-based ferroelectric materials.

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Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂

Xu,

Lomenzo,

Kersch

et al. 2023

Adv Funct Materials

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Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago, fluorite‐structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal‐oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO2 films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO2 films, which can be applied to other fluorite‐structured films.

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The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances

Cited by 12 publications

References 136 publications

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Performance improvement of HfO2-based ferroelectric with 3D cylindrical capacitor stress optimization

Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂

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The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances

Cited by 12 publications

References 136 publications

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2

Performance improvement of HfO2-based ferroelectric with 3D cylindrical capacitor stress optimization

Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2

Contact Info

Product

Resources

About

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂