The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta₂O₅)_0.85(TiO₂)_0.15films

Abstract

Influence of substrate bias voltage on the physical, electrical and dielectric properties of RF magnetron sputtered TiO 2 films P Kondaiah, M Chandra Sekhar, S V Jagadeesh Chandra et al.

Gold nanoparticles embedded in Ta2O5/Ta3N5 as active visible-light plasmonic photocatalysts for solar hydrogen evolution

“…51,52 All diffraction peaks of the Nano Au/Ta 2 O 5 sample annealed at 650 C or higher temperature can be assigned exactly to the standard data of Ta 2 O 5 (JCPDS 25-0922). 53 Usually, a higher annealing temperature can signicantly improve the lattice integrity and crystallinity of the Nano Au/Ta 2 O 5 nanoarchitectures, which will optimize their photocatalytic activities for H 2 evolution accordingly. 50 The crystallite size of the samples can be estimated from the Scherrer equation, D ¼ 0.941l/b cos q, where D is the average grain size, l is the X-ray wavelength (0.15405 nm), and q and b are the diffraction angle and full-width at half-maximum of an observed peak, respectively.…”

Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content

“…Two strong peaks are located at 26.80 eV (Ta 2 O 5 ) and 28.60 eV (Ta 4𝑓 5/2 ) [14]. The 1.8 eV difference between both is very close to the spin-orbit of Ta 4𝑓 (1.9 eV), indicating the formation of Ta 2 O 5[15,16] and TaON[17] again. From the above results, it can be suggested that the LaTaON dielectric film has been formed.…”