The Effect of Sulfurization Temperature on CuIn(Se,S)₂Solar Cells Synthesized by Electrodeposition

Abstract

The properties of thin film solar cells based on electrodeposited CuIn(Se,S)2 were investigated. The proposed solar cell fabrication method involves a single-step CuInSe2 thin film electrodeposition followed by sulfurization in a tube furnace to form a CuIn(Se,S)2 quaternary phase. A sulfurization temperature of 450–550°C significantly affected the performance of the CuIn(Se,S)2 thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall bandgap of the CuIn(Se,S)2 thin film. The highest conversion efficiency of 3.12% under air mass (AM) 1.5 illumination was obtained from the 500°C-sulfurized solar cell. The highest External Quantum Efficiency (EQE) was also observed at the sulfurization temperature of 500°C.

Electrodeposition of CuGaSe2 and CuGaS2 thin films for photovoltaic applications

“…This diffraction pattern confirms that, after sulfurization, Se atoms have been replaced by S atoms, and consequently CuGaSe2 thin films have been transformed into CuGaS2 [13,14,15].…”

Synthesis of in-gap band CuGaS2:Cr absorbers and numerical assessment of their performance in solar cells

“…Besides, the effect of neutral defects related to Cr-doping on the performance of solar cells was also studied and discussed. confirms the replacement of Se atoms by S atoms after sulfurization, and consequently, CuGaSe2 thin films were transformed into CuGaS2 [14,15,16].…”

Thin Film Solar Cells Based on Copper-Indiumgalium Selenide (Cigs) Materials Deposited by Electrochemical Techniques.

“…Currently efforts are being made to increase the thin film efficiency to the theoretical determination as well as to improve inexpensive deposition strategies for the chalcopyrite absorber layer [136].…”