2003
DOI: 10.1134/1.1591216
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The effect of superstructural ordering on the properties of high-temperature oxide superconductor systems

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Cited by 4 publications
(9 citation statements)
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“…0.5 0.213 0.5 0.141 0.5 0.098 optimally doped (0.06≤ x ≤0.15) and from the underdoped to heavily overdoped (0.06≤x ≤0.21) regimes in full accordance with the existing experimental results [18][19][20][21].We have shown that the metal-insulator transitions in these cuprate superconductors are induced by the localization of hole carriers near the smallradius dopants and in the regions without such impurities. We have found that the criteria for metal-insulator transitions driven by the hole-impurity-lattice and hole-lattice interactions are quite different.…”
Section: Discussionsupporting
confidence: 86%
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“…0.5 0.213 0.5 0.141 0.5 0.098 optimally doped (0.06≤ x ≤0.15) and from the underdoped to heavily overdoped (0.06≤x ≤0.21) regimes in full accordance with the existing experimental results [18][19][20][21].We have shown that the metal-insulator transitions in these cuprate superconductors are induced by the localization of hole carriers near the smallradius dopants and in the regions without such impurities. We have found that the criteria for metal-insulator transitions driven by the hole-impurity-lattice and hole-lattice interactions are quite different.…”
Section: Discussionsupporting
confidence: 86%
“…This new model predicts much more reliable results for metal-insulator transitions in doped La-based cuprates than other existing results predicted by the single-carrier cuprate superconductor model. We have argued that none of the previously proposed theoretical models considering only one type of localized charge carriers in doped cuprates, are capable of accounting for the full body of experimental data [6,9,[18][19][20][21] and the metal-insulator transitions observed in a wide doping range from the lightly doped to heavily doped regime in a La-based cuprates with small-radius dopants. The scientific significance of our obtained results is that the metalinsulator transitions in La-based cuprate compounds occur not only in underdoped regime in accordance with experimental results [18] but also in the two distinct doping ranges, namely, from the underdoped to…”
Section: Discussionmentioning
confidence: 99%
“…Thus, we see that, in LSCO, the metal-insulator transitions and multiscale (from nanoscale to macroscale) phase separation into carrier-rich metallic (at > 1 and > 2 ) regions and carrier-poor insulating (at < 2 and < 1 ) regions may occur in the doping interval from ≃ 0.042 (lightly doped region) to 0.131 (underdoped region including also the "magic doping = 1/8"), while such metalinsulator transitions and phase separation in YBCO would occur in the doping interval from ≃ 0.021 to ≃ 0.125. These results are in reasonable agreement with the experimental data on the metal-to-insulator crossover and the stripe formation in lightly doped and underdoped cuprates [18,24,25,61,62].…”
Section: Distinctive Metal-insulator Transitions and Multiscale Phasesupporting
confidence: 91%
“…Our results indicate that the first metallic phases appear in the lightly doped cuprates at > 0.02 in the form of narrow stripes (Fig. 1, b) in accordance with the experimental findings [18,67]. It follows that the insulator-to-metal transition and the nanoscale phase separation in the lightly doped cuprates ( ≃ 0.02-0.05) occur only on a local scale (in small carrier-rich regions).…”
Section: Supression Of Superconductivity In Underdoped Highc Cupratessupporting
confidence: 90%
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