The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

Green, B.M.; Chu, K.; Chumbes, E.M.; Smart, J.; Shealy, J. R.; Eastman, L.F.

doi:10.1109/55.843146

Cited by 685 publications

(313 citation statements)

References 5 publications

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“…The passivation has been shown to be necessary to reduce the influence of dispersion. 1 In this report capacitance-voltage ͓C͑V͔͒ measurements of metalinsulator-semiconductor-heterostructure ͑MISH͒ capacitors are utilized to characterize the interface between the heterostructure and the passivation layer.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Fagerlind

Allerstam

Sveinbjörnsson

et al. 2010

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Fagerlind

Allerstam

Sveinbjörnsson

et al. 2010

Journal of Applied Physics

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“…6,7 The surface passivation approach was suggested to increase the microwave output power. 9,10 However, although the current collapse phenomenon seems to be general for different types of GaNAlGaN FETs, as well as for GaAs power FETs, both the concrete mechanism of rf output power suppression and physical locations of the carrier trapping centers responsible for the collapse, are still far from clear.…”

Section: Mechanism Of Radio-frequency Current Collapse In Gan-algan Fmentioning

confidence: 99%

“…This is contrary to the conclusions of past researchers. 9,10 ͑ii͒ The current compression in gate-pulsed mode occurs both at low ͑below the knee voltage͒ and high drain bias ͓Fig. 1͑a͔͒.…”

Section: Mechanism Of Radio-frequency Current Collapse In Gan-algan Fmentioning

confidence: 99%

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

Tarakji

Simin

Il’inskaya

et al. 2001

Applied Physics Letters

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The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunction field-effect transistors (HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We find that the microwave power degradation in GaN–AlGaN HFETs can be explained by the difference between dc and pulsed I–V characteristics.

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“…In addition to Si doping during epitaxy, many papers have reported that Si donors could be incorporated during the deposition process of silicon nitride passivation which could increase the density of 2DEG. [15][16][17] Si donors have been proved to be one of the causes of 2DEG variation from theory and experiment due to Gauss's law and charge neutrality principle. 6,16,[18][19][20] Onojima et al 16 speculated that Si atoms at the SiN x /AlGaN interface might act as donors, which partially neutralize negative polarization charges at the AlGaN surface, and lead to a reduction in the AlGaN potential barrier height, thereby increasing 2DEG density.…”

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confidence: 99%

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Song

Sun

et al. 2017

AIP Advances

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In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

Cited by 685 publications

References 5 publications

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

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