and cycling ability high. Most of the studies in the field were performed on electrical double layer capacitors or on EC based on pseudocapacitive transition metal oxides (MnO 2 , RuO 2 , FeWO 4 ). Pseudocapacitance is used to explain the charge storage mechanism in a capacitive electrode where the storage process arises from fast redox reactions with no phase transformation of the electrode material. Pseudocapacitance is Faradaic in origin, involving the passage of charge across the double layer, as in battery charging or discharging, but capacitance arises on account of the special relation that can originate for thermodynamic reasons between the extent of charge acceptance (ΔQ) and the change of potential (ΔV), so that a derivative d(ΔQ)/d(ΔV), which is equivalent to a capacitance, can be formulated and experimentally measured by dc, ac, or transient techniques. While this process is basically different from ion accumulation in porous carbon electrodes, the signature of the pseudocapacitive material is characterized by triangular shape constant current charge/discharge plots and quasirectangular shape cyclic voltammograms. Only a few number of papers focused on nitride-based supercapacitors although, Conway [2] et al. demonstrated in 1988 the potential use of molybdenum nitride pseudocapacitive material acting as an efficient electrode for electrochemical capacitors.Micro-supercapacitors (MSC) are considered as promising miniaturized electrochemical energy storage devices for Internet of Things applications. Unfortunately, the technological readiness level of these devices is still at the lab scale with the development of individual prototypes due to the difficulty to produce high performance porous electrode material with microelectronic equipment available in pilot production lines. Here, the collective fabrication of on chip MSC based on sputtered porous vanadium nitride (VN) bifunctional material is reported. For the first time in the field of MSC, the porosity of the sputtered VN thin films is fine-tuned at the nanoscale level in order to produce high capacitance and high conductive electrodes. Interdigitated MSC based on optimized VN thin films are fabricated on silicon wafers using microelectronic facilities. 2 μWh cm −2 /10 mWh cm −3 energy densities are reached while keeping a high power density (10 mW cm −2 />50 W cm −3 ) owing to high electrical conductivity of VN layers. Sputtered vanadium nitride thin films are demonstrated to be suitable pseudocapacitive electrodes and highly conductive current collectors for MSC applications. These findings represent a major advance in order to go toward the large-scale deployment of such miniaturized power sources.
Micro-SupercapacitorsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.