The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

“…At scaling MOS transistors, various degradation effects occur. Among them, there are short-channel effects [1,2], effects leading to a decrease the reliability of the transistor [3], the self-heating effect [4], and an increase in the sensitivity of various characteristics to the trapping of a single charge in the gate dielectric layer or at the gate dielectric-channel, which leads to the phenomenon of random telegraph noise in the drain current [5]. In addition, nanometer fin transistors, dimensional deviations leading to a change in the shape of the channel [6] can be observed.…”

The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

“…However, these fluctuations can lead to significant variation of the transistor parameters and characteristics. In particular, it was established [12][13][14] that variations of the characteristics, parameters, and short-channel effects depend on the cannel (fin) shape and dimensions of FinFETs operating in the inversion mode.…”