The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Yacoub, Hady; Fahle, Dirk; Finken, Matthias; Hahn, Hernsoo; Blumberg, Christian; Prost, W.; Kalisch, H.; Heuken, M.; Vescan, A.

doi:10.1088/0268-1242/29/11/115012

Cited by 65 publications

(49 citation statements)

References 14 publications

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“…The I–V curves shown in the inset of Figure are not symmetric, with a larger reverse current at low bias as already reported by Perez‐Tomas and in agreement with results obtained on thin AlN MOVPE grown on p‐doped Silicon . However, considering the C–V profile presented in Figure c, further analysis is necessary to say if the model involving the presence of an electron inversion layer can be applied here.…”

Section: Reduction Of the Aln Growth Temperaturesupporting

confidence: 87%

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Cordier

Comyn

Frayssinet

et al. 2017

Physica Status Solidi (a)

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Despite the fact that a lower growth temperature is generally considered as a drawback for achieving high crystal quality, the necessity to reduce the nucleation temperature of AlN on Silicon has permitted Molecular Beam Epitaxy (MBE) to demonstrate high performance for GaN transistors operating at high frequency. Compared to Metal‐Organic Vapor Phase Epitaxy (MOVPE), the control of the interface between the AlN nucleation layer and the substrate is easier and the reduced growth temperature allows to obtain a more electrically resistive interface while keeping good crystal quality. Moreover, it is shown that further reducing the growth temperature within the nucleation and stress mitigating layers has a noticeable impact on the lateral and vertical buffer leakage currents. At the same time the buffer of MBE grown HEMT structures exhibits low RF propagation losses (below 0.5 dB mm−1 up to 70 GHz). Also, results obtained with structures regrown by MOVPE on MBE AlN‐on‐Si templates confirm that the thermal budget is critical for the resistivity of AlN/Si. On the other hand, the insertion of a 1.5 μm thick Al0.05Ga0.95N layer within a 2 μm HEMT structure significantly improves the vertical breakdown voltage up to 740 V permitting to compare favorably with MOVPE epilayers with similar total thickness.

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Section: Reduction Of the Aln Growth Temperaturesupporting

confidence: 87%

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Cordier

Comyn

Frayssinet

et al. 2017

Physica Status Solidi (a)

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“…A similar observation for the leakage current at a high electric field has been also made by other groups. 39,40 As [C] increases, ln(J/E vf )ÀE 1=2 vf curves gradually became super-linear, suggesting a gradual deviation from a pure Poole-Frenkel conduction mechanism as increasing [C]. Figure 3 shows the S values of the Al 0.1 Ga 0.9 N layer with [C] ¼ 5 Â 10 17 cm À3 as a function of incident positron energy E. The mean implantation depth of positrons is shown on the upper horizontal axis.…”

Section: Methodsmentioning

confidence: 99%

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Uedono

Zhao

Simoen

2016

Journal of Applied Physics

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Articles you may be interested inProbing the effect of point defects on the leakage blocking capability of Al 0.1 Ga 0.9 N/Si structures using a monoenergetic positron beam ) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al 0.1 Ga 0.9 N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (C N s). The charge state of the vacancies was positive because of the electron transfer from the defects to C N -related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by C N -related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and C N -related acceptors. Published by AIP Publishing. [http://dx

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“…There is, however, very little investigation on the influence of this growth step on the electrical behavior of the complete epitaxial stack. In previous research, the vertical buffer current was correlated to charge injection from the silicon substrate . The origin of the injected carriers was found to be a parasitic channel forming between the AlN nucleation and the silicon substrate, indicating the importance of this layer to the overall device performance.…”

Section: Introductionmentioning

confidence: 94%

Impact of AlN/Si Nucleation Layers Grown Either by NH₃‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs

Yacoub¹,

Zweipfennig²,

Kalisch³

et al. 2018

Physica Status Solidi (a)

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Epitaxial growth of group III nitrides on silicon substrates is challenging as large lattice and thermal expansion coefficient mismatches have to be accounted for. It is generally accepted that AlN is the best nucleation layer for GaN‐on‐Si growth. However, some open questions remain about this AlN nucleation layer. In this study, it is investigated how the choice of deposition method of the AlN nucleation layer affects the material and electrical properties of a full HFET structure. First, electrical characterization is performed on thin AlN layers deposited on two inch p‐type silicon substrates grown by NH3‐MBE. CV characteristics indicate that electron injection from an inversion‐like layer at the AlN/Si‐interface is suppressed. Based on previous studies, this leads to the expectation that choosing MBE‐AlN may actually result in superior properties at the device level. Finally, the full HFET stack is grown by MOCVD on both types of AlN nucleation layers. Hall measurements on active devices yield comparable mobilities for both nucleation methods. Preliminary data suggest that MBE‐AlN does not have any detrimental impact the dynamic properties of the buffer. The vertical breakdown voltage measured at 1 μA mm−2 is increased by 30% and the leakage current measured at 600 V is reduced by two orders of magnitude.

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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Cited by 65 publications

References 14 publications

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Impact of AlN/Si Nucleation Layers Grown Either by NH₃‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs

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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Cited by 65 publications

References 14 publications

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Impact of AlN/Si Nucleation Layers Grown Either by NH3‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs

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Impact of AlN/Si Nucleation Layers Grown Either by NH₃‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs