The Effect of Thermal Annealing on Charge Transport in Organolead Halide Perovskite Microplate Field‐Effect Transistors

Abstract

Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipolar p-type behavior in CH NH PbI microplate field-effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low-concentration defects in perovskite materials.

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

“…Thin-Film: CH 3 NH 3 PbI 3−x Cl x [32,33,104,105,110,111,113,[120][121][122] has been investigated as semiconductor in FETs. Chin et al [102] fabricated a FET by using CH 3 NH 3 PbI 3 as channel and 500 nm SiO 2 layer as the dielectric layer.…”

“…Additionally, poly(methyl methacrylate) (PMMA) was applied to protect the channel from moisture and oxygen. [110] Based on this result, the same group [111] investigated the effect of annealing on the FET performance. It is worth mentioning that weak but notable hysteresis was observed for both transfer curves and output curves, which would affect the accuracy of mobility but not significantly.…”

“…[112] The grain size of the MAPbI 3 thin film was modified to tune the performance of FET devices. [109,111,123] Wang et al [109] patterned FET devices by using MAPbI 3 microplates through a lithographic process. Three different temperature regimes for mobility were determined.…”

“…Equal hole and electron mobilities of 10 cm 2 V −1 s −1 was achieved at room temperature, which is owing to large grain size and passivation of grain boundaries by the formation of solvent complexes. [32,104,107,[109][110][111]113,121,122] The extracted mobility would fluctuate significantly based on measurement conditions, such as sweeping direction and sweeping rate. The FET devices were fabricated by using individual CH 3 NH 3 PbI 3 microplates as the semiconducting layer, two prefabricated Cr/Au electrodes as the source-drain, and 300 nm SiO 2 as gate dielectric layer.…”

“…[103] Microplates: Li et al [110] investigated the size-dependent phase transitions of CH 3 NH 3 PbI 3 microplates. [110,111] The hysteresis can be attributed to ferroelectricity, ion diffusion in the perovskite material, and the charge carrier trapping/de-trapping at the interfaces. A FET mobility of 0.28 cm 2 V −1 s −1 was obtained at 175 K based on negative sweeping curve ( Figure 5).…”