The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

Abstract

This paper presents the effect of different cooling rate after annealing on structural and electrical properties of TiO2 thin films. Titanium dioxide thin film was deposited on a silicon substrate using DC magnetron technique. After annealing TiO2 thin films at 600 o C, to investigate the effect of different cooling rates on TiO2 thin films, samples were cooled down from 600 o C to the room temperature under 3 different rates: 2 o C/min, 6 o C/min and 8 o C/min. The Surface morphology, crystal structure, and electrical property of samples were characterized by atomic force measurement (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) technique. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of titanium dioxide. Sample with 2 o C/m has the biggest grain size, and more electrical resistivity while the smallest grain size and lowest electrical resistivity belong to sample with 8 o C/m cooling rate. 1.INTRODUCTION:TiO2 as one of the most thermally and chemically stable semiconductor has been attractive for many researchers [1][2][3][4][5][6]. Due to its interesting chemical, electrical and optical properties [7,8] it has been widely used in many application like solar cells [9], photocatalysis [10], gas sensor [11]. Also, because of its low electrical resistivity, TiO2 is an interesting material for microelectronic devices [12].The TiO2 thin film can be fabricated using various methods, like chemical vapor deposition (CVD), ion beam deposition, sol gel dip, plasma enhance chemical vapor deposition, RF magnetron sputtering, and DC magnetron sputtering [13,15] Since DC magnetron sputtering is a more controllable deposition technique that

Dye-sensitized solar cells containing photoelectrodes with TiO2 grids

“…This phase will facilitate the electrode transport in a dye-sensitized solar cell. The TiO 2 grid has a crystallite size of 1.67 nm, which is estimated from its XRD peaks [18]. This crystallite size is close to the experimental value (1.24 nm) reported by Asalzadeh et al [18].…”

“…The TiO 2 grid has a crystallite size of 1.67 nm, which is estimated from its XRD peaks [18]. This crystallite size is close to the experimental value (1.24 nm) reported by Asalzadeh et al [18]. Figures 4(a) and (b) display the scanning electron microscope images of the TiO 2 grid at incident angles of 0°a nd 45°, respectively.…”

Laser Scanning Speed Influences on Assessment of Laser Remelted Commercially Pure Titanium Grade 2

“…On the surface of Cp Ti, it can be noticed that as the laser speed decreased, the number of pulses per unit area increased (1.4 for the 10mm/s speed and 1.5 for the 4mm/s speed). Lower laser scanning speeds give the laser beam more time to alter the surface and more opportunities to produce more pulses on the Cp Ti surface (19).…”

Improved Interface of Encapsulating Sm-Doped TiO<sub>2</sub> Thin Films/RuO<sub>2</sub> Schottky Diodes for a Junction Spectropy Measurement

“…In addition, especially for semiinsulating materials such as Titania (TiO 2 ) sample quality (e.g. grain boundaries) and conductivity is key to improving practical devices [19]. In this paper, TiO 2 is selected as a host material for Samarium (Sm), one of the rare-earths exhibiting red and infrared emission.…”