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This paper presents the effect of different cooling rate after annealing on structural and electrical properties of TiO2 thin films. Titanium dioxide thin film was deposited on a silicon substrate using DC magnetron technique. After annealing TiO2 thin films at 600 o C, to investigate the effect of different cooling rates on TiO2 thin films, samples were cooled down from 600 o C to the room temperature under 3 different rates: 2 o C/min, 6 o C/min and 8 o C/min. The Surface morphology, crystal structure, and electrical property of samples were characterized by atomic force measurement (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) technique. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of titanium dioxide. Sample with 2 o C/m has the biggest grain size, and more electrical resistivity while the smallest grain size and lowest electrical resistivity belong to sample with 8 o C/m cooling rate. 1.INTRODUCTION:TiO2 as one of the most thermally and chemically stable semiconductor has been attractive for many researchers [1][2][3][4][5][6]. Due to its interesting chemical, electrical and optical properties [7,8] it has been widely used in many application like solar cells [9], photocatalysis [10], gas sensor [11]. Also, because of its low electrical resistivity, TiO2 is an interesting material for microelectronic devices [12].The TiO2 thin film can be fabricated using various methods, like chemical vapor deposition (CVD), ion beam deposition, sol gel dip, plasma enhance chemical vapor deposition, RF magnetron sputtering, and DC magnetron sputtering [13,15] Since DC magnetron sputtering is a more controllable deposition technique that