The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition

Chaibi, F.; Jemaï, R.; Águas, Hugo; Khemakhem, H.; Khirouni, K.

doi:10.1007/s10853-017-1791-1

Cited by 14 publications

(3 citation statements)

References 43 publications

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“…The growth mechanism of Si QD-based thin lm prepared by the way of PECVD in-situ deposition has been intensively studied, and the effect of dilution gas on lm growth have been clearly clari ed [31][32][33] .…”

Section: Discussionmentioning

confidence: 99%

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Gu,

Shan,

Jia

2024

Preprint

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Co-doping of phosphorus and boron elements into crystalline silicon quantum dot (c-Si QD) is an effective approach for enhancing the photoluminescence (PL) performance. In this paper, we report on the preparation of hydrogenated silicon nitride (SiNx:H) thin films embedded with phosphorus-boron co-doped c-Si QDs via plasma enhanced chemical vapor deposition (PECVD) route. Mixed dilution including hydrogen (H2) and argon (Ar) is applied in the in-situ deposition process for optimizing the deposition process. The P-B co-doped c-Si QD/SiNx:H thin films exhibit a wide range of PL spectra. The emission is greatly improved especially for the short-wavelength light when compared to the SiOx:H thin film containing P-B co-doped c-Si QDs. The effects of H2/Ar flow ratio on the structural and optical characteristics of thin films are systematically investigated through a series of characterizations. Experimental results show that various properties, such as crystallinity, QD size, optical band gap and doping concentrations, are effectively controlled by tuning H2/Ar flow ratio. Based on the red-shift of QCE-related PL peak, the successful P-B co-doping into Si QDs are verified. Finally, a comprehensive discussion has been made to analyze the influence of H2-Ar mixed dilution on the film growth and impurity doping in detail in this paper.

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Section: Discussionmentioning

confidence: 99%

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Gu,

Shan,

Jia

2024

Preprint

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“…During the film growth process, plasma power and chamber pressure were maintained at 260 W and 0.4 Torr, respectively. H 2 as a diluent in plasma was used to initiate a rapid nanocrystallization, while He was used to facilitate a higher deposition rate at a lower power and also to maintain a lower ion energy at the growth zone. ,, The presence of CO 2 in plasma introduced the oxygenated network; however, an increased flow rate of CO 2 was used to transform the network from nanocrystalline to an amorphous-dominated structure …”

Section: Methodsmentioning

confidence: 99%

Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiO_X:H Thin Films

Das

Samanta

2021

ACS Appl. Electron. Mater.

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Temperature-dependent ac conductivity, impedance spectroscopy, and complex dielectric properties have been investigated on boron-doped silicon oxide (SiO X :H) films grown by radio frequency plasma-enhanced chemical vapor deposition at low temperature (∼250 °C). The two-phase characteristics, e.g., silicon nanocrystals (Si-ncs) embedded in amorphous oxide (a-SiO X :H) tissues, have been evaluated initially by structural studies and subsequently via impedance spectroscopy. Impedance spectroscopy also facilitates identifying the contribution of each individual phase (nanocrystalline and amorphous) on the electronic properties of the materials. The dependence of relaxation time on temperature obeys Arrhenius behavior and also confirms a non-Debye type response under the varying electric field. The negative temperature coefficient of resistance behavior reveals the semiconducting nature of the materials. A designed equivalent circuit model using parallel R∥CPE shows comprehensive correlation among structural, microstructural, and charge carrier characteristics. Frequency-dependent conductivity follows Jonscher’s power law non-linear fitting and reveals a less than unity magnitude of its exponent “n”. The temperature dependence of ac conductance identifies a non-overlapping small polaron tunneling mechanism prevailing in the B-doped SiO X :H network. The tunneling distance is higher in B-doped nc-SiO X :H, and it reduces faster at higher frequency in the B-doped a-SiO X :H matrix. The charge carrier density of states, N(E F), is higher in nc-SiO X :H; however, the lower N(E F) of B-doped a-SiO X :H enhances faster at elevated frequency. The frequency-dependent electrical transport in the B-doped nanocrystalline/amorphous heterostructured SiO X :H network has never been explored before.

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“…As for PECVD route, various dilution gases, such as H 2 , He, Xe and Ar, are introduced for diluting precursor gases and creating high-density plasma [10][11][12]. Thereinto H 2 has the effect on prompting the crystallization of as-deposited Si-based thin films, while deposition rate and doping efficiency are possible to be effectively improved in Ar plasma due to the metastable state Ar * .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Liu,

Sun,

Tang

et al. 2024

Phys. Scr.

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Plasma enhanced chemical vapor deposition (PECVD) method has been utilized to fabricate phosphorous-doped hydrogenated nanocrystalline silicon carbide (P-doped nc-SiCx:H) thin films on polyethylene terephthalate (PET) substrate. With the aim at obtaining highly conductive thin films, H2/Ar mixed dilution has been applied for creating plasma during deposition, and the variation of structural, electrical and optical properties with H2/Ar flow ratio RH have been systemically investigated through a series of characterizations. Results show that the highly crystallized P-doped nc-SiCx:H thin film can be prepared while the properties are controllable through adjusting RH. In the case of RH=0.75, the maximum dark conductivity (6.42 S/cm) and a wide optical bandgap (1.93 eV) are attained. Finally, detail discussion has been made to illustrate the growth mechanism of the flexible P-doped nc-SiCx:H thin films.

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The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition

Cited by 14 publications

References 43 publications

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiO_X:H Thin Films

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

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The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition

Cited by 14 publications

References 43 publications

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiOX:H Thin Films

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

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Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiO_X:H Thin Films