The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

“…Before the deposition process, the surface was prepared for deposition and various solutions were used to wash the silicone surface, as described in Ref. [8].…”

“…Using Eqs. 7and (8), the values of R s , n, and Φ Β are estimated 3.38 KΩ, 5.58, 0.62 eV for MS diodes, and 241 Ω, 5.74, 0.75 eV for MPS diodes, respectively. The results of this method also indicate that the (PVP: Sn-TeO 2 ) interfacial layer reduces the series resistance and the ideality factor and increases the barrier height, and consequently, improves the efficiency of the metal-semiconductor diode.…”

“…Thus, the value Φ B0 was calculated from the Eq. (4a) using the experimental value of I o and rectifier contact area (A) and the other parameters have been introduced in previous works [8,23,24]. The calculated Φ B0 of the MS and MPS diodes are 0.62 eV and 0.76 eV, respectively.…”

“…Figure 4a shows that the plot has two and three linear sections with different slopes for the MS and MPS diodes, which are named I, II, III. The current conduction/transport mechanisms differ from one region to another due to various factors, e.g., BH heterogeneity, R s , and density of Nss [7,8].…”

“…Such an interfacial layer may be created or passivated many traps or states at M/S interface and changes the current conduction mechanism of the structure by trapping and releasing free charge carriers. Also, these levels/traps, in turn, change the efficiency and rectification of the diode by affecting parameters, e.g., n, R s , and barrier height (BH) [7,8].…”