The effects of bulk traps on the performance of bulk channel charge-coupled devices

Mohsen, A.M.; Tompsett, M.F.

doi:10.1109/t-ed.1974.17997

Cited by 108 publications

(20 citation statements)

References 14 publications

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“…The serial CTE data is more interest-ing. It shows the inefficiency of the traps at high temperature, where the clock overlap time is longer than the detrapping time, as well as the low temperature region where the traps are mostly saturated due to the long detrapping time [9]. The parallel CTE does not recover at cold temperatures since trap saturation does not play a role for the much slower line transfer over the operating temperature range of the CCD.…”

Section: B Cte Resultsmentioning

confidence: 99%

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Bebek

Groom

Holland

et al. 2002

IEEE Trans. Nucl. Sci.

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Abstract-P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1 × 10 11 protons/cm 2 at 12 MeV. The charge transfer efficiency and dark curent were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.

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Section: B Cte Resultsmentioning

confidence: 99%

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Bebek

Groom

Holland

et al. 2002

IEEE Trans. Nucl. Sci.

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“…The four CCDs were irradiated to total doses of 5x10 9 , 1x10 10 , 5x10 10 , and 1x10 11 protons/cm 2 . The irradiation was performed at a dose rate of less than 2x10 7 protons/cm 2 /s with the devices operated unpowered at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…According to a simplified model [4,7] in which the trap capture time is considered to be instantaneous it can be shown that the CTI is given by (3) where N t is the trap density and n e is the electron (hole) density in a pixel holding a charge packet to be transferred. This pixel is then followed by N z empty pixels before the next charged pixel is encountered.…”

Section: Model Of the Trap Effectiveness And Ctementioning

confidence: 99%

<title>Proton radiation damage in high-resistivity n-type silicon CCDs</title>

et al. 2002

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A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x10 11 protons/cm 2 . The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.

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“…Previous experimental results on CCD radiation hardness were reported for example in [6]- [8]. Several models increased the understanding of radiation damage effects in CCDs [9]- [11]. The measurements and analyses reported in this paper have been carried out in the LCFI collaboration [3].…”

Section: Introductionmentioning

confidence: 99%

Measurements of Charge Transfer Inefficiency in a CCD With High-Speed Column Parallel Readout

Sopczak

Bekhouche

Damerell

et al. 2009

IEEE Trans. Nucl. Sci.

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Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. A test stand for measuring the charge transfer inefficiency (CTI) of a prototype CPCCD has been set up. Studies of the CTI have been performed at a range of readout frequencies and operating temperatures. Abstract-Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying shortlived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. A test stand for measuring the charge transfer inefficiency (CTI) of a prototype CPCCD has been set up. Studies of the CTI have been performed at a range of readout frequencies and operating temperatures.

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The effects of bulk traps on the performance of bulk channel charge-coupled devices

Cited by 108 publications

References 14 publications

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

<title>Proton radiation damage in high-resistivity n-type silicon CCDs</title>

Measurements of Charge Transfer Inefficiency in a CCD With High-Speed Column Parallel Readout

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