The effects of contact type on the properties of semiinsulating GaAs photodetectors

Riesz, Ferenc; Serényi, Miklós; Németh-Sallay, M.; Szentpali, B.

doi:10.1002/pssa.2211430136

Cited by 4 publications

(5 citation statements)

References 9 publications

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“…This dark current, although orders of magnitude higher than that of our SI GaAs detection [3], is comparable to or better than that of other GaAs/Si devices having similar geometries [9].…”

supporting

confidence: 50%

“…1 with the bias voltage as a parameter. The gain of the Schottky devices is larger than that of the ohmic ones at the same bias, optical power and similar geometry, in contrary to devices with the same geometry and metallization but fabricated on Cr-doped, SI GaAs [3]. In those devices, the Schottky devices possess no gain but the ohmic devices do.…”

mentioning

confidence: 90%

“…In this work, we study the dark current and photoresponse properties of planar, interdigitated GaAs/Si photodetection grown by molecular beam epitaxy (MBE). We analyze the effects of contact type, and compare our devices to those fabricated on Cr-doped, semiinsulating (SI) GaAs [3].The Si substrate was (100) p+-type 4° miscut towards [011]. A nominally undoped 2 m layer was first grown by MBE using a twostep method.…”

mentioning

confidence: 99%

“…Interdigital metal patterns were then formed by lift-off [5]. Devices with non-alloyed Cr/Au (60/400 nm) and alloyed AuGe/Ni/Au (75/12/200 nm) contacts were fabricated.…”

mentioning

confidence: 99%

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Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si

Riesz

Varrio

1995

Acta Phys. Pol. A

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Interdigital, planar photodetectors were fabricated from annealed GaAs/Si heterostructures grown by molecular beam epitaxy using alloyed AuGe/Ni and non-alloyed Cr/Au contacts. The dark current and optical gain of the Cr/Au devices is higher than that of the AuGe/Ni devices. Contact degradation due to annealing and a p-like background doping consistently explains our data. The gain-optical power relationship follows a power 1aw with an exponent close to -1. PACS numbers: 73.50. Pz, 73.40.Sx, 85.60.Gz The growth of GaAs on Si allows the integration of GaAs devices with the Si technology [1-2]. However, the 4.1% large lattice mismatch results in a high defect density in the epilayer which alters the physical properties of the epilayer and the devices made of it. In this work, we study the dark current and photoresponse properties of planar, interdigitated GaAs/Si photodetection grown by molecular beam epitaxy (MBE). We analyze the effects of contact type, and compare our devices to those fabricated on Cr-doped, semiinsulating (SI) GaAs [3].The Si substrate was (100) p+-type 4° miscut towards [011]. A nominally undoped 2 m layer was first grown by MBE using a twostep method. We applied an unusually high growth rate to enhance growth planarity, and consequently, an epilayer quality [2]: the 50 nm buffer layer was grown with a 5 m/h growth rate at

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“…This dark current, although orders of magnitude higher than that of our SI GaAs detection [3], is comparable to or better than that of other GaAs/Si devices having similar geometries [9].…”

supporting

confidence: 50%

mentioning

confidence: 90%

mentioning

confidence: 99%

“…Interdigital metal patterns were then formed by lift-off [5]. Devices with non-alloyed Cr/Au (60/400 nm) and alloyed AuGe/Ni/Au (75/12/200 nm) contacts were fabricated.…”

mentioning

confidence: 99%

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Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si

Riesz

Varrio

1995

Acta Phys. Pol. A

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“…The main purpose of this IBE step is to create oxygen vacancies in order to reduce an effective barrier at the metal/semiconductor interface. This step helps in the formation of good ohmic contacts, which are necessary for photoconduction with a gain higher than 1 [11]. Figure 1(a) shows a SEM image of a ZnO nw contacted with Ti/Au electrodes.…”

Section: Methodsmentioning

confidence: 99%

Mitigating the photocurrent persistence of single ZnO nanowires for low noise photodetection applications

Girard¹,

Giraudet²,

Kostcheev³

et al. 2018

Nanotechnology

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In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for applications based on integrated optics. Single ZnO nanowire photodetectors were fabricated with ohmic contacts. By taking current transient measurements in different atmospheres (oxygen, air, vacuum and argon), and at various temperatures, we point out the importance of surface effects on the electrical behaviour. Results confirm that oxygen chemisorption is responsible for the existence of a high photoconductive gain in these devices, and for the first time a two step process in the photocurrent rise transient is reported. A maximum gain of G = 7.8 × 10 7 is achieved. However, under certain conditions, the persistence of the photocurrent can last up to several hours and as such may prevent the device from operating at useful rates. From a knowledge of the photocurrent response mechanisms, we establish a method to restore the photodetector to its initial state, with very low dark current, by applying an appropriate gate voltage sequence. This advances the state of the art for these detectors towards commercial applications. arXiv:1907.11393v1 [physics.optics]

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Optical gain in photoconductors made of compensated and partially compensated GaAs

Riesz

1995

Appl. Phys. A

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The effects of contact type on the properties of semiinsulating GaAs photodetectors

Cited by 4 publications

References 9 publications

Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si

Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si

Mitigating the photocurrent persistence of single ZnO nanowires for low noise photodetection applications

Optical gain in photoconductors made of compensated and partially compensated GaAs

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