The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors

Sah, C. T.; Pao, H.C.

doi:10.1109/t-ed.1966.15702

Cited by 127 publications

(20 citation statements)

References 9 publications

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“…These are from the 1965-Sah-Pao model [27,28] which assumed x-independent electron and hole electrochemical or quasi-Fermi potentials to give the xequation or voltage equation (7): U N (x,y) = U N (x=0,y) = U NS (y) and U P (x,y) = U P (x=0,y) = U PS (y). The 2004-Sah-Jie remote electrical charge neutrality condition is also used which includes the minority carriers, = 0 = q[P(x,y) N(x,y) P IM ] to overcome the physical unreality near and at flatband, U S =0 [2].…”

Section: Theoretical Equationsmentioning

confidence: 99%

Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling

Sah

Jie

2006

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

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Operation lifetime of logic MOS transistors, endurance of memory MOS transistors, trapping noise in analog and RF MOS transistors, and standby power dissipation in all of these transistors, have their common origin in electron-hole GRT (generation-recombination-trapping) at SiO 2 /Si interface traps. Inclusion of GRT in MOS transistor model can be made using the surface-potential approach adopted by the next (second) generation compact model. This paper describes the theoretical analysis of the GRT currents in the long-wide-channel MOS transistor model to serve as the baseline for compact modeling.

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Section: Theoretical Equationsmentioning

confidence: 99%

Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling

Sah

Jie

2006

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

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“…The junction between drain and substrate is widened by the reverse bias applied. The Pao-Sah model [32][33][34][35] describes the MOSFET structure very well, and the introduction into this model of the charge sheet approximation of the inversion layer, is making the model not only accurate but simple. In addition, the charge sheet model [28,36] is the best basis for understanding the long channel device [37][38][39][40][41][42].…”

Section: Mos Field Effect Transistor Mosfetmentioning

confidence: 99%

Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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PROF. DR. MICHAEL POTTHOFFii "Τὸν δὲ νοῦ καί ἐπιστήμης ἐραστὴν ἀνάγκη τὰς τῆς ἔμφρονος φύσεως αἰτίας πρώ-τας μεταδιώκειν." Πλάτωνος, Τίμαιος, Κεφ. 16 "The lover of reason and knowledge must first seek for the causes which belong to the rational order."Plato, Timaeus, Ch. 16 iii To my parents. . . iv AbstractSilicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface.In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

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“…We decided to review the history of MOS transistor compact modeling [1] in order to supplement a 10-author review presentation [2] on the state-of-the-art of MOS transistor compact models. The efforts of industrial-standard compact-transistor-modeling began in 1996 with the consensus first-generation BSIM of Professor Chenming Hu of UC Berkeley using my [1964][1965] threshold-voltage model [3,4]. After a decade, it was to advance to an industrial consensus second generation model in 2006, using my 1965-1966 Sah-Pao surface-potential model [4,5], with the surface potential as the parameter in order to continuously characterize the current ranges of saturation, linear, subthreshold, flat-band and cut-off, in the MOS transistor current-voltage characteristics, more accurately than the threshold-voltage model.…”

Section: Forewordmentioning

confidence: 99%