2016
DOI: 10.1016/j.nima.2016.04.017
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The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

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Cited by 14 publications
(1 citation statement)
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“…en, they tested the deep-level transient spectrum of defects and found that the two types of damages are not working individually [1,2]. Based on simulations and experiments, Wang et al discovered the gain degradation caused by mixed neutrons and gamma rays on lateral PNP transistors is greater than the simple sum of the DD and TID [3][4][5]. ey all illustrated that TID effects could enhance DD effects.…”
Section: Introductionmentioning
confidence: 99%
“…en, they tested the deep-level transient spectrum of defects and found that the two types of damages are not working individually [1,2]. Based on simulations and experiments, Wang et al discovered the gain degradation caused by mixed neutrons and gamma rays on lateral PNP transistors is greater than the simple sum of the DD and TID [3][4][5]. ey all illustrated that TID effects could enhance DD effects.…”
Section: Introductionmentioning
confidence: 99%