The Effects of Hydrogen Doping on Expansion of a Process Zone of Cz Silicon Single Crystals

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

“…We developed hydrogen‐doped CZ‐Si crystal technology in 2005 to increase process window of the v/G control for grown‐in defect‐free crystals . Hydrogen can be doped into a CZ‐Si crystal through silicon melt by mixing hydrogen gas in argon atmosphere at a concentration range of up to 8% during crystal growth.…”

“…X‐ray topography images of grow‐in defect distribution after 2‐step annealing for crystals doped with hydrogen concentrations of (a) 0 and (b) 6%, respectively. Adapted with permission . Copyright 2014, National Diet Library.…”

“…Normalized v/G defect map of hydrogen‐doped CZ‐Si crystals as function of hydrogen concentration in argon atmosphere during crystal growth. Adapted with permission . Copyright 2014, National Diet Library.…”

“…It is necessary to mention the disadvantages regarding hydrogen‐doped MCZ‐Si crystals. One disadvantage concerns safety, such as combustion and explosion of hydrogen gas during crystal growth, and the other is concerned with the occurrence of characteristic hydrogen defects in the crystals . It was already mentioned that it is possible to avoid the former problem by setting the upper limit of hydrogen gas concentration into the CZ furnace.…”

“…Hydrogen defects have been studied in detail by Sugimura et al The nature of such defects is a crack with its origin confirmed to be voids and dislocation clusters. For this reason, hydrogen defects occur in the void and dislocation‐cluster regions but not in the Pv, Pi, and OSF‐ring regions.…”