The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

Jiao, Qianqian; Chen, Zhizhong; Feng, Yue; Li, Shunfeng; Jiang, Shengxiang; Li, Junze; Chen, Yifan; Yu, Tongjun; Kang, Xiaoning; Shen, Bo; Zhang, Guoyi

doi:10.1186/s11671-016-1548-9

Cited by 27 publications

(24 citation statements)

References 40 publications

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“…Such optical properties of a nanorod LED structure have been usually studied theoretically using numerical simulations based on the finite-difference time-domain (FDTD) method due to its complex geometry [22][23][24]. In the FDTD method, a point dipole source is placed inside the nanorod structure and the evolution of electromagnetic fields is monitored, from which the LEE or the Purcell factor can be calculated.…”

Section: Simulation Methodsmentioning

confidence: 99%

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Ryu

2018

Crystals

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Light extraction efficiency (LEE) of GaN-based nanorod blue light-emitting diode (LED) structures is investigated using finite-difference time-domain (FDTD) simulations. When the LEE is calculated for different source positions inside the nanorod, the LEE is found to depend strongly on the source positions and the polarization directions for each source position, implying that the LEE of nanorod LED structures should be evaluated by averaging over source positions and polarization directions for determining the LEE accurately. The averaged LEE of nanorod LED structures is simulated as the radius, the p-GaN thickness, and the n-GaN thickness is varied, and the optimum structural parameters can be obtained. In addition, the far-field pattern is simulated when considering the averaging effects, and the circularly symmetric and uniform emission distribution is obtained.

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Section: Simulation Methodsmentioning

confidence: 99%

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Ryu

2018

Crystals

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“…The observed peculiarities may be related to the fine structure of excitonic spectrum, comprising exciton complexes and excited exciton states, as well as to the different conditions of exciton localization at a single BSFs and at their pairs or bunches. One cannot exclude also the influence of specific light output from the NRs, which act as an optical antenna that imposes the prevailing light polarization along the NR axis …”

Section: Narrow Pl Peaks In the Green Spectral Rangementioning

confidence: 99%

Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev

Robin

Shubina

et al. 2019

Physica Status Solidi (b)

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Individual core-shell GaN nanorods (NRs) with InGaN quantum wells (QWs), lying in non-polar, semi-polar, and polar planes, are investigated by micro-photoluminescence (μ-PL) spectroscopy. Complementary transmission electron microscopy (TEM) studies reveal the presence of basal stacking faults (BSFs), which intersect the QWs. Narrow peaks of excitonic emission were detected at the NR tips, where the BSFs can both cross the semi-polar QWs and penetrate through the thick polar well. In the NRs without the polar wells, the peaks appear in the blue spectral range only, while in the NRs with such wells, the peaks also appear in the green spectral range. Polarization resolved μ-PL measurements reveal the scattering of linear polarization degree among the narrow peaks, as well as among individual NRs, although the dominant polarization of the narrow lines was normal to the NR axis. In general, these findings are consistent with the origination of the narrow excitonic lines from the intersections of the BSFs with QWs of different types. Experimental TechniquesThe NRs were grown on a Si-doped GaN template (n ¼ 4 Â 10 18 cm À3 ) formed on a silicon (111) substrate by

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“…Recent developments include elaboration of micro-LEDs and semiconductor nanostructuration. 1,2 Phosphor elaboration is also a key factor in optimizing the efficiency and stability of phosphor-converted LED (pc-LED) lighting devices. 3,4,5,6 In this context and for the development of new applications, particularly for miniaturization involving solution-based deposition techniques (e.g.…”

Section: Introductionmentioning

confidence: 99%

Twofold advantage of gas bubbling for the advanced solvothermal preparation of efficient YAG:Ce nanophosphors

et al. 2020

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The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

Cited by 27 publications

References 40 publications

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Twofold advantage of gas bubbling for the advanced solvothermal preparation of efficient YAG:Ce nanophosphors

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