The effects of oxygen, carbon dioxide and water vapor on reprocessing silicon carbide inert matrix fuels by corrosion in molten potassium carbonate

Cheng, Ting; Baney, Ronald H.; Tulenko, J.S.

doi:10.1016/j.jnucmat.2011.01.041

Cited by 9 publications

(9 citation statements)

References 17 publications

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“…Linear fitting curves following 1/R SiC loss versus 1/P H2O and 1/R SiC loss versus 1/P H2O 0.5 based on Eqs. (19), (20), and (21) are applied in Figs. 12 (a)-(c), respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Based on the SiO 2 crystallization kinetics model expressed in Eqs. (19), (20), and (21) representing models of single water molecule absorption, water dissociation, and impurity dominating, respectively, linear regression of 1/R SiC loss versus 1/P H2O , 1/R SiC loss versus 1/P H2O , 0.5 and 1/R SiC loss versus 1/P H2O 1.5 was plotted in Figs. 12 (a)-(c).…”

Section: (2) Paralinear Sic Oxidation Kinetics In High-pressure Steammentioning

confidence: 99%

“…The intercepts obtained in those plots represent 1/Dk H2O , 2/Dk H2O , and 1/EK im in Eqs. (19), (20), and (21), respectively. Based on the available data, Eq.…”

Section: (2) Paralinear Sic Oxidation Kinetics In High-pressure Steammentioning

confidence: 99%

“…The recession kinetics of silicon carbide in steam has been studied for decades . Much research has been focused on assessing the long‐term (>500 h) SiC recession in relatively low‐pressure (<0.1 MPa) wet air environments.…”

Section: Introductionmentioning

confidence: 99%

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Silicon Carbide Oxidation in High‐Pressure Steam

Cheng

Tortorelli

2013

J. Am. Ceram. Soc.

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Silicon carbide is a candidate cladding for fission power reactors that can potentially provide better accident tolerance than zirconium alloys. SiC has also been discussed as a host matrix for nuclear fuel. Chemical vapor-deposited silicon carbide specimens were exposed in 0.34-2.07 MPa steam at low gas velocity (~50 cm/min) and temperatures from 1000°C to 1300°C for 2-48 h. As previously observed at lower steam pressure of 0.15 MPa, a two-layer SiO 2 scale was formed during exposure to these conditions, composed of a porous cristobalite layer above a thin, dense amorphous SiO 2 surface layer. Growth of both layers depends on temperature, time, and steam pressure. A quantitative kinetics model is presented to describe the SiO 2 scale growth, whereby the amorphous layer is formed through a diffusion process and linearly consumed by an amorphous to crystalline phase transition process. Paralinear kinetics of SiC recession were observed after exposure in 0.34 MPa steam at 1200°C within 48 h. High-pressure steam environments are seen to form very thick (10-100 lm) cristobalite SiO 2 layers on CVD SiC even after relatively short-term exposures (several hours). The crystalline SiO 2 layer and SiC recession rate significantly depend on steam pressure. Another model is presented to describe the SiC recession rate in terms of steam pressure when a linear phase transition k l governing the recession kinetics, whereby the reciprocal of recession rate is found to follow a negative unity steam pressure power law.

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“…Linear fitting curves following 1/R SiC loss versus 1/P H2O and 1/R SiC loss versus 1/P H2O 0.5 based on Eqs. (19), (20), and (21) are applied in Figs. 12 (a)-(c), respectively.…”

Section: Resultsmentioning

confidence: 99%

Section: (2) Paralinear Sic Oxidation Kinetics In High-pressure Steammentioning

confidence: 99%

“…The intercepts obtained in those plots represent 1/Dk H2O , 2/Dk H2O , and 1/EK im in Eqs. (19), (20), and (21), respectively. Based on the available data, Eq.…”

Section: (2) Paralinear Sic Oxidation Kinetics In High-pressure Steammentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silicon Carbide Oxidation in High‐Pressure Steam

Cheng

Tortorelli

2013

J. Am. Ceram. Soc.

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“…During the oxidation process, the formation of a cracked monoclinic outer and an inner tetragonal layer of ZrO 2 with porosity, where oxygen transport is controlled primarily by the number of oxygen vacancies, over Zircaloy tube was reported by Causey et al 20 It is believed that SiC coatings applied to the Zircaloy cladding can drastically reduce this corrosion and degradation, due to its resistance to corrosive environments at high temperatures and order of magnitude less chemical reactivity with water or steam. 21,22 Recent reports recommend SiC and SiC/SiC as promising materials for supplementing or replacing Zircaloy cladding and are expected to offer improved safety features, reduced contamination of the primary circuit, and a simplified disposal process. 15,23 SiC is a wide-band gap semiconductor material with high breakdown electric field strength, high-saturated drift velocity of electrons, and high thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review

Selvakumar

Sathiyamoorthy

2012

J. Mater. Res.

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REVIEWThis section of Journal of Materials Research is reserved for papers that are reviews of literature in a given area.Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review Next-generation fission and fusion nuclear reactor materials will be exposed to very high temperatures, intense neutron radiation, corrosive environments, and, mostly, all three at once. Grand opening will be given to the material, if they have stability at high temperature operating favorable in the extreme environments, self-healing, thermal as well as irradiation properties. Owing to the superior properties of silicon carbide, nuclear scientists are closely evaluating SiC-based materials for various applications in nuclear reactors. In the present perspective, relevant properties, challenging issues, and recommendations are emphasized. Based on our recent experiments, attempt to solve various uses on SiC-based materials in nuclear applications is described in detail.

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Rare earth silicate environmental barrier coatings: Present status and prospective

Xu³

et al. 2017

Ceramics International

200

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The effects of oxygen, carbon dioxide and water vapor on reprocessing silicon carbide inert matrix fuels by corrosion in molten potassium carbonate

Cited by 9 publications

References 17 publications

Silicon Carbide Oxidation in High‐Pressure Steam

Silicon Carbide Oxidation in High‐Pressure Steam

Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review

Rare earth silicate environmental barrier coatings: Present status and prospective

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