1988
DOI: 10.1016/0040-6090(88)90695-5
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The effects of oxygen concentration in sputter-deposited molybdenum films

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Cited by 28 publications
(6 citation statements)
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“…The resistivity of our films is much lesser than the values reported (~ 40-80 -cm) for the Mo films with comparable or larger crystallite sizes [8,27,30]. The effect of oxygen contamination during the film growth upon its electrical properties is well documented [12,19,20]. The reduced sheet resistance and resistivity of the films in present work could be attributed to lesser oxygen contamination due to increase in the deposition rate and repulsion of negative oxygen ions away from the growing films [20].…”
Section: Resultsmentioning
confidence: 72%
“…The resistivity of our films is much lesser than the values reported (~ 40-80 -cm) for the Mo films with comparable or larger crystallite sizes [8,27,30]. The effect of oxygen contamination during the film growth upon its electrical properties is well documented [12,19,20]. The reduced sheet resistance and resistivity of the films in present work could be attributed to lesser oxygen contamination due to increase in the deposition rate and repulsion of negative oxygen ions away from the growing films [20].…”
Section: Resultsmentioning
confidence: 72%
“…The changes in the resistivity of Mo films were attributed to the degree of oxygen contamination and microstructural modifications during growth. This explanation was sustained by Bardin et al [2] who showed that the electrical resistivity of Mo films decreases as the amount of oxygen contamination decreases at higher deposition rates. Yamaghuchi and Miyagawa [9] showed also that the sputtered Mo thin films microstructures and stresses were affected by oxygen.…”
Section: Introductionmentioning
confidence: 85%
“…Because of its low resistivity and high melting point, sputterdeposited thin films of molybdenum (Mo) are increasingly being used as the gate electrode in GaAs-based metal gate field effect transistors (MESFETs) and silicon-based metal-oxidesemiconductor (MOS) devices [2,4,5,9]. Successful performance of Mo as the gate electrode was found to be affected by the deposition conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Similar surface morphologies have been reported previously for the Mo films deposited using magnetron sputtering 23,[30][31][32] . The effect of impurities on the morphology and physical properties of Mo thin films has already been reported 33,34 . For metals like Mo with atoms having low surface mobility, the presence of impurities like O2 and water vapor further hinder the grain growth during film deposition.…”
Section: Crystal Structure and Surface Morphologymentioning
confidence: 91%