The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ)

Scanning x-ray microscopy investigations into the electron-beam exposure mechanism of hydrogen silsesquioxane resists

“…11 Liu and Change, et al studied the effects of hydrogen treatment on HSQ. 21 HSQ treated to H 2 plasma has reduced dielectric constants and leakage currents presumably because dangling bonds are passivated by H atoms and cannot react as easily with moisture. This is consistent with studies of optical absorption losses in silica fibers where the presence of Si-OH can increase absorption losses after radiation damage while hydrogen gas treatment can mitigate the effects of gamma radiation damage.…”

Basic characteristics of the a-SiOC∶H thin films prepared by PE CVD

“…An assignment of absorption bands is as follows: CH 3 , CH 2 , groups in region around 2970÷3000 cm −1 [2], [3], [5], vinyl asymmetric stretching groups at 3058 cm −1 [6], [2], Si-C=C stretching at 1600 cm −1 [6], vinyl CH 2 deformation at 1410 cm −1 [6] and vinyl =CH waging at 1010 cm −1 [6] and the bonds related to ethoxy groups at 1160 cm −1 , 1100 cm −1 , 1072 cm −1 [2], [3], [5]. Absorption bands corresponding to the vinyl groups were not apparent in IR spectra of pp-VTES films, but markedly developed Si-O-Si network peak at 1072 cm −1 [7], [6], [8] was dominated the entire spectrum. The peak indicates a siloxane structure of the plasma polymer.…”

Resisting oxygen plasma damage in low-k hydrogen silsesquioxane films by hydrogen plasma treatment

“…This leads to an increase in the RC delay, which increases with scaling down and leads to various problems. This RC delay can be reduced by using Cu instead of Al (by approximately 35%), and by using inter-metal dielectric with dielectric constant k lower than that of SiO 2 (∼ 4), so called low-k dielectrics [1][2][3]. Replacement of SiO 2 by air (k ∼ 1) and Al by Cu for the same circuitry can reduce RC delay by 75%.…”