The effects of porous silicon on the crystalline properties of ZnO thin films

Cai, Hong; Shen, Honglie; Yin, Yugang; Li-zhu, LU; Shen, Jialin; Tang, Zhengxia

doi:10.1016/j.jpcs.2009.05.004

Cited by 63 publications

(18 citation statements)

References 19 publications

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“…Our ZnO films, obtained at a relatively "soft" temperature for synthesis conditions (300°C), have a low value of residual stress and high crystalline perfection even without subsequent annealing. The comparison of our results with the results of other authors, for example [14,17], allows us to conclude that the low value of the residual stress is caused by the effect of a porous silicon substrate.…”

Section: Samplesupporting

confidence: 75%

Structural and optical properties of ZnO films obtained on mesoporous Si substrates by the method of HF magnetron sputtering

Кидалов¹,

Dyadenchuk²,

Bacherikov³

et al. 2020

Turk J Phys

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In the present work, ZnO films were obtained on mesoporous silicon substrates by the method of HF magnetron sputtering of a metallic zinc target in reaction oxygen and argon gas medium. The properties of the ZnO films obtained on mesoporous substrates were studied depending on the ratio of the partial pressures of the working gases (argon/oxygen). X-ray analysis showed that in the process of deposition, the ZnO films of a hexagonal structure were formed. The effect of the porous layer on the structural and luminescent properties of the thin ZnO films was studied.The results showed that the porous silicon substrate reduces residual stresses and can be used for obtaining high-quality ZnO films.

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Section: Samplesupporting

confidence: 75%

Structural and optical properties of ZnO films obtained on mesoporous Si substrates by the method of HF magnetron sputtering

Кидалов¹,

Dyadenchuk²,

Bacherikov³

et al. 2020

Turk J Phys

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“…Different approaches have been followed to deposit ZnO on PS or nucleate it inside PS such as pulsed laser deposition 1 , magnetron sputtering 3,4 , thermal spray 22 or sol-gel spin-coating [23][24][25] . Relevantly, the sol-gel technique has been described to produce proper nanocomposites with adjustable optoelectronic properties since low surface tension ZnO precursors are able to easily permeate the PS with precise Zn 2+ concentrations 26 .…”

Section: Introductionmentioning

confidence: 99%

Luminescence and fine structure correlation in ZnO permeated porous silicon nanocomposites

Gallach

Muñoz-Noval

Torres-Costa

et al. 2015

Phys. Chem. Chem. Phys.

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Nanocomposites formed by porous silicon (PS) and zinc oxide (ZnO) have potential for applications in optoelectronic devices. However, understanding the distribution of both materials in the nanocomposite, and especially the fine structure of the synthesized ZnO crystals, is key for future device fabrication. This study focuses on the advanced characterization of a range of PS-ZnO nanocomposites by using photon- and ion-based techniques, such as X-ray absorption spectroscopy (XAS) and elastic backscattering spectroscopy (EBS), respectively. PS substrates formed by the electrochemical etching of p(+)-type Si are used as host material for the sol-gel nucleation of ZnO nanoparticles. Different properties are induced by annealing in air at temperatures ranging from 200 °C to 800 °C. Results show that wurtzite ZnO nanoparticles form only at temperatures above 200 °C, coexisting with Si quantum dots (QDs) inside a PS matrix. Increasing the annealing temperature leads to structural and distribution changes that affect the electronic and local structure of the samples changing their luminescence. Temperatures around 800 °C activate the formation of a new zinc silicate phase and transform PS into an amorphous silicon oxide (SiOx, x≈ 2) matrix with a noticeably reduced presence of Si QDs. Thus, these changes affect dramatically the emission from these nanocomposites and their potential applications.

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“…Therefore, the rough surface morphology of the PS substrate plays a major role in controlling the growth of the wetting layer. The porous layer is a good substrate in lattice mismatch heteroepitaxy due to its special surface morphology [18]. The surface of the porous silicon layer is composed of numerous nano-silicon crystals.…”

Section: Resultsmentioning

confidence: 99%