The Effects of Pressure and Temperature on the Resistance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions in Germanium

Hall, H. H.; Bardeen, John; Pearson, G. L.

doi:10.1103/physrev.84.129

Cited by 76 publications

(16 citation statements)

References 9 publications

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“…The influence of strain on the intrinsic mobility of silicon was first investigated in the early 1950's [6,7] and was revived in the beginning of the 1990's [8]. A number of strain technologies have been developed.…”

Section: Strain Engineering Techniquesmentioning

confidence: 99%

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Modeling of modern MOSFETs with strain

et al. 2009

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We review modeling techniques used to compute strain induced performance enhancement of modern MOSFETs. While p-channel MOSFETs were intensively studied, electron transport in strained structures received surprisingly little attention. A rigorous analysis of the subband structure in thin silicon films under stress is performed. Calculated subband effective masses are shown to strongly depend on shear strain and film thickness. A decrease of the transport effective mass under tensile stress in [110] direction and an additional splitting between the unprimed subbands with the same quantum number guarantees a mobility enhancement even in ultra-thin (001) silicon films. This increase of mobility and drive current combined with the improved channel control makes multi-gate MOSFETs based on thin films or silicon fins preeminent candidates for the 22 nm technology node and beyond.Keywords MOSFETs modeling · Shear strain · Two-band k·p model for conduction band · Valley splitting · Mobility and current enhancement

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Section: Strain Engineering Techniquesmentioning

confidence: 99%

“…Figure 3a demonstrates the effective masses on strain of the two ground subbands in ultra-thin silicon films. Interestingly, the effective masses in relaxed ultra-thin films become different along [110] or [1][2][3][4][5][6][7][8][9][10] directions. Their dependence on the film thickness is displayed in Fig.…”

Section: Effective Masses Of Unprimed Subbandsmentioning

confidence: 99%

Modeling of modern MOSFETs with strain

et al. 2009

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“…It is also assumed that the base is subject to a homogeneous stress, and has a homogeneous, nondegenerate doping. Because of the stress, however, it cannot be assumed that the mobility of the minorities is (1) where the Einstein convention has been used to define the double sum over the tensor elements [13].…”

Section: Modellingmentioning

confidence: 99%

“…It has been known for forty years that the saturation current of silicon bipolar transistors is modified by mechanical stress [1] [2]. This piezojunction effect can be both useful and unwanted.…”

Section: Introductionmentioning

confidence: 99%

An Analytical Model of the Piezojunction Effect for Arbitrary Stress and Current Orientations

Creemer

French

2001

Transducers ’01 Eurosensors XV

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SUMMARYThe saturation current of bipolar transistors is modified by mechanical stress through the piezojunction effect. This effect can be used in mechanical sensors, but is unwanted in electronic circuits stressed by their package. We have developed a new model of the effect which is practical in sensor and circuit design. It is similar to the widespread model of the piezoresistive effect. It has been verified experimentally by characterising transistors under bending stress, which also yielded values for many of the model coefficients. Due to the crystallographic symmetry of silicon, only a small number of those coefficients is needed to describe the piezojunction effect.

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“…It is therefore most probable that the detection of the strain pulses takes place at the interface between the Si substrate and the NW bases. Then the detection mechanism is based on a piezojunction effect 13,14 and is similar to the previously studied case of Schottky diodes 10 and p-n junctions 15 where the temporal resolution is defined by the width of the depletion layers near the interfaces. The drag of the carriers through NW by the strain pulses 16,17 in the studied devices is unlikely because of high value of f c and respective small value of the vertical extent of the detection region.…”

mentioning

confidence: 98%

Electrical detection of picosecond acoustic pulses in vertical transport devices with nanowires

Young

Bouravleuv

Cirlin

et al. 2014

Applied Physics Letters

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Picosecond acoustic pulses, generated in a thin aluminum transducer, are injected into semiconductor vertical transport devices consisting of core-shell GaAsP nanowires. The acoustic pulses induce current pulses in the device with amplitude ∼1 μA. The spectrum of the electrical response is sensitive to the elastic properties of the device and has a frequency cutoff at ∼10 GHz. This work shows the potential of the technique for studies the elastic properties of complex semiconductor nanodevices.

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The Effects of Pressure and Temperature on the Resistance ofp−nJunctions in Germanium

Cited by 76 publications

References 9 publications

Modeling of modern MOSFETs with strain

Modeling of modern MOSFETs with strain

An Analytical Model of the Piezojunction Effect for Arbitrary Stress and Current Orientations

Electrical detection of picosecond acoustic pulses in vertical transport devices with nanowires

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