An Analytical Model of the Piezojunction Effect for Arbitrary Stress and Current Orientations

Creemer, J.F.; French, P.J.

doi:10.1007/978-3-642-59497-7_60

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…Depending on the requirements of a given gas-sensing application, the stress sensitivity has to be addressed in more detail: packaging-and temperature-induced stress affects the saturation current of a bipolar transistor owing to the piezojunction effect [141,142]. The resulting degradation of the performance has to be simulated and experimentally verified.…”

Section: Resultsmentioning

confidence: 99%

CMOS Single Chip Gas Detection Systems — Part I

et al. 2002

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The current trend to control indoor air-quality and to monitor environmental pollution has created a strong demand for miniaturized and inexpensive gas sensors for volatile organic compounds (VOCs). Gas sensor arrays based on industrial CMOS-processes combined with post-CMOS micromachining (CMOS MEMS) are a promising approach to low-cost sensor devices. In this article, the state of research of CMOS-based gas sensor systems is reviewed, and a platform technology is described, which provides the possibility of monolithically integrating several different transducers on a single chip. A design environment, batch-fabrication processes, and fast testing procedures were developed to realize an example single-chip gas detection system. The chip includes the transducers, their biasing circuitry, reference elements, a digital interface, and a temperature sensor. The three polymer-based transducers and their interface electronics will be detailed in the second part of this article [1].

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Section: Resultsmentioning

confidence: 99%

CMOS Single Chip Gas Detection Systems — Part I

et al. 2002

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Electrical Compensation of Mechanical Stress Drift in Precision Analog Circuits

Motz

Ausserlechner

2016

Wideband Continuous-Time ΣΔ ADCs, Automotive Electronics, and Power Management

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Anisotropy of the piezojunction effect in silicon transistors

Creemer

French²

Technical Digest. MEMS 2002 IEEE International Conference. Fifteenth IEEE International Conference on Micro Electro Mechanical

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Mechanical stress influences the saturation current of a bipolar transistor by means of the piezojunction effect. This effect can therefore serve to detect stress in micromachined sensors. It has recently been modelled for the relatively low stress levels occuring in those sensors. With the use of this model the first-order stress sensitivity of the most common transistors can be analysed. It appears that the sensitivity of vertical transistors in both {loo} and { 11 l } wafers is isotropic with respect to the stress orientation.

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An Analytical Model of the Piezojunction Effect for Arbitrary Stress and Current Orientations

Cited by 3 publications

References 14 publications

CMOS Single Chip Gas Detection Systems — Part I

CMOS Single Chip Gas Detection Systems — Part I

Electrical Compensation of Mechanical Stress Drift in Precision Analog Circuits

Anisotropy of the piezojunction effect in silicon transistors

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