The Effects of Proton Irradiation on the Performance of High-Voltage n-MOSFETs Implemented in a Low-Voltage SiGe BiCMOS Platform

Najafizadeh, Laleh; Vo, Tuan; Phillips, S.D.; Cheng, Peng; Wilcox, Edward P.; Cressler, John D.; Mojarradi, Mohammad; Marshall, P.W.

doi:10.1109/tns.2008.2007120

Cited by 6 publications

(2 citation statements)

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“…Once mirrored into the output branches, the differential signal is converted to a voltage by diodes M 13 and M 14 , where it is read by standard low-voltage CMOS analog processing circuitry. The pMOS transistors forming the high-side current sources are protected from breakdown by high-voltage N-wells as described by Najafizadeh et al [9]. The low-voltage current source is formed by LDMOS transistors available in-process, also as described by Najafizadeh et al [9].…”

Section: High-voltage Levelmentioning

confidence: 99%

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A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications

et al. 2010

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An instrumentation channel is designed, implemented, and tested in a 0.5-μm SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces an assortment of external sensors to signal processing circuits. Also, analog sampling is implemented in the channel using a flying capacitor configuration. The analog samples are digitized by a low-power multichannel A/D converter. Measurement results show that the instrumentation channel supports input signals up to 200 Hz and operates across a wide temperature range of -180°C to 125°C. This work demonstrates the use of a commercially available first generation SiGe BiCMOS process in designing circuits suitable for extreme environment applications.

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Section: High-voltage Levelmentioning

confidence: 99%

“…The pMOS transistors forming the high-side current sources are protected from breakdown by high-voltage N-wells as described by Najafizadeh et al [9]. The low-voltage current source is formed by LDMOS transistors available in-process, also as described by Najafizadeh et al [9].…”

Section: High-voltage Levelmentioning

confidence: 99%