1975
DOI: 10.1063/1.322073
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The effects of radiation-induced displacement damage on impurity conduction in gallium arsenide

Abstract: The effects of 60Co γ-ray and high-energy neutron displacement damage on impurity conduction in epitaxial gallium arsenide were investigated. The activation energy (ε2) associated with the transition regime of the impurity conduction process was found to increase by a factor of 5 as a result of 60Co γ irradiation, and only by a factor of 1.6 for a comparable neutron irradiation. In addition, the ratio of the Hall carrier density at low and high temperatures, (nH)4 K/(nH)300 K, decreased by a larger amount for … Show more

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Cited by 10 publications
(1 citation statement)
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“…As the concentration of deep traps increases, with increasing irradiation fluence, the Fermi level shifts towards the middle of the band gap. Similar defects have been observed after irradiation with 1 MeV electrons [10,21] and Co 60 g-rays [22] with activation energies of 30 and 20 meV, respectively. In this case the device current is thermally activated and allows the determination of the position, in the band gap, of the donorlike defect that controls the device current.…”
Section: Electron Trap Introductionsupporting
confidence: 76%
“…As the concentration of deep traps increases, with increasing irradiation fluence, the Fermi level shifts towards the middle of the band gap. Similar defects have been observed after irradiation with 1 MeV electrons [10,21] and Co 60 g-rays [22] with activation energies of 30 and 20 meV, respectively. In this case the device current is thermally activated and allows the determination of the position, in the band gap, of the donorlike defect that controls the device current.…”
Section: Electron Trap Introductionsupporting
confidence: 76%