The Effects of Si Doping on the Endurance and Stability Improvement of AlN-Based Resistive Random Access Memory

Abstract

Aluminum nitride (AlN) based resistance random access memory (RRAM) devices with TiN/AlN/Pt metal− insulator−metal (MIM) structures were fabricated in this study. To improve the characteristics of the RRAM such as high endurance operation and high resistance switching stability, silicon dopants were doped into AlN films by using the cosputtering method. Then, the influence of the concentration of silicon doping on the bipolar switching characteristics of AlN-based RRAM was studied. The research results show that the on/off ratio of the device after silicon doping has increased from 10 to about 1000, the set voltage has reduced from 2.5 to 1.9 V, and the reset voltage has reduced from −1.5 to −1.1 V. The stability of resistance switching (RS) is also improved. Besides, it is found that silicon doping helps to lower the instability caused by the oxygen ions and increased the endurance cycle (>2.5 × 10 6 cycles). Based on the results, the detailed mechanisms were also investigated systematically.

Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices

“…The Al 2p XPS signals can be decomposed into the peaks corresponding to AlÀAl (72.8 eV), AlÀN (74.1 eV), and AlÀO (74.7 eV) bonds, respectively. 3,37,38 According to the literature, 3,39 the relative amount of nitrogen vacancies can be deduced from the AlÀAl content. Fig.…”

“…1,2 Among the candidates of nonvolatile memory devices, resistive random access memory (RRAM) devices have advantages including a simple metal-insulator-metal structure, high operation speed, low operating voltage, low energy consumption, etc. [2][3][4] A variety of metal oxides (such as HfO 2 , ZrO 2 , Ta 2 O 5 , and TiO 2 ) have been used in RRAM devices based on conductive filaments. 5,6 However, the local heating effect produces uncontrolled conductive filaments, resulting in challenges including switching current overshoot, non-uniformity, and device-to-device variation.…”

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

“…Oxidation could be progressed on the TaN and AlN surfaces in the air, and some oxygen may remain in the chamber during AlN deposition. It is noted that most of the existing AlN film was also oxidized [ 21 , 22 , 23 , 24 ]. Figure 1 d also confirms that the oxidation of a thin film occurs not only in the AlN film, but also in the TaN film [ 21 ].…”

“…The maximum voltage for the switching transition increases from −2.60 V to −1.88 V and from +2.48 V to +1.94 V, respectively. Since the required voltage for operation is reduced, the PSB induces the explosive growth of conductive filaments and makes the device operate well even at low voltages [ 23 ]. In addition, it might suggest that there is a variation between the front and rear switching mechanisms.…”

Soret-effect induced phase-change in chromium nitride semiconductor film

“…the open markers indicate the reference data from 17,18 . f Programming window of various nextgeneration nonvolatile memories 3,17,[19][20][21][22] .…”