1999
DOI: 10.1016/s0040-6090(99)00556-8
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The effects of substrates on carbon nitride thin films prepared by direct dual ion beam deposition

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Cited by 24 publications
(11 citation statements)
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“…These three deconvoluted peaks are located at BEs of $398.5, $400.0, and $ 401.5 eV, which can be assigned to sp 3 C-N, sp 2 C-N, and N-O bonds, respectively. [21][22][23][24] For the N 1s spectrum of sample B (Fig. 5(e)), only two peaks (one peak is located at $398.5 eV from sp 3 C-N bonds and the other peak is located at $400.0 eV from sp 2 C-N bonds) are needed to fit the spectrum.…”
Section: Resultsmentioning
confidence: 99%
“…These three deconvoluted peaks are located at BEs of $398.5, $400.0, and $ 401.5 eV, which can be assigned to sp 3 C-N, sp 2 C-N, and N-O bonds, respectively. [21][22][23][24] For the N 1s spectrum of sample B (Fig. 5(e)), only two peaks (one peak is located at $398.5 eV from sp 3 C-N bonds and the other peak is located at $400.0 eV from sp 2 C-N bonds) are needed to fit the spectrum.…”
Section: Resultsmentioning
confidence: 99%
“…Fig. 3(e) reveals N also has three different bonding energies, i.e., 397.75, 399.83 and 398.39 eV, which can be attributed to spC RN, sp 2 C QN, sp 3 C2N bonding states, respectively [30][31][32]. Conventionally, the N:C molar ratio can be estimated from the areas of the corresponding XPS peaks.…”
Section: Article In Pressmentioning
confidence: 99%
“…The direct ion deposition process has been proven to be very effective in the synthesis of thin films with high quality at low temperature because it can control the energy of deposited atoms [8][9][10]. Cesium-assisted sputtering is the one of direct ion deposition techniques leading to negative ionization of deposited atoms.…”
Section: Introductionmentioning
confidence: 99%