IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.Help me understand this report
The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs
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“…To remove this contribution, a metallic gate electrode is required [4]. Such a metallic electrode has the additional benefit of removing the high concentration of dopant atoms adjacent to the channel, to which the dopant atoms can diffuse during processing with adverse effects on performance [5].…”
Section: Introductionmentioning
confidence: 99%
“…To remove this contribution, a metallic gate electrode is required [4]. Such a metallic electrode has the additional benefit of removing the high concentration of dopant atoms adjacent to the channel, to which the dopant atoms can diffuse during processing with adverse effects on performance [5].…”
Section: Introductionmentioning
confidence: 99%
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