2015
DOI: 10.1016/j.matdes.2015.05.054
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The effects of the SiOSi segment presence in BAPP/BPDA polyimide system on morphology and hardness properties for opto-electronic application

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Cited by 19 publications
(8 citation statements)
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“…The mechanism of HF dissolving silica particles in the polymer is known as the H+ ion of HF breaking the bond of SiOSi through chemical treatment . Silica oxide particles are typically etched by HF solution: SiO2+4HF SiF4+2H2O. …”
Section: Resultsmentioning
confidence: 99%
“…The mechanism of HF dissolving silica particles in the polymer is known as the H+ ion of HF breaking the bond of SiOSi through chemical treatment . Silica oxide particles are typically etched by HF solution: SiO2+4HF SiF4+2H2O. …”
Section: Resultsmentioning
confidence: 99%
“…With the fast evolution of the microelectronics industry, the impact of the propagation velocity delay of the signal, crosstalk, and power dissipation on microelectronic performance is becoming increasingly apparent. [1][2][3] To address these shortcomings, it is critical to develop new interlayer insulation structure, and the side methyl group can significantly reduce the interaction between PI molecular chains, resulting in the improvement of solubility and melt processability (thermoplasticity) of PI films. Furthermore, the large fluorenyl cardo groups of BAFL greatly enhanced the rigidity of the molecular skeleton, which significantly increased the heat resistance of polyimide.…”
Section: Introductionmentioning
confidence: 99%
“…With the fast evolution of the microelectronics industry, the impact of the propagation velocity delay of the signal, cross‐talk, and power dissipation on microelectronic performance is becoming increasingly apparent. [ 1–3 ] To address these shortcomings, it is critical to develop new interlayer insulation materials with low dielectric constants (low‐ k ) and excellent comprehensive performance. Polyimides (PIs) are regarded as potential candidates for low‐ k interlayer dielectric materials due to their low dielectric constant, good thermal resistance, and excellent mechanical properties.…”
Section: Introductionmentioning
confidence: 99%
“…Free volume of the block copolymer is increased, leading to compromised hardness and enhanced flexibility. [23,24] Furthermore, a rigidness/softness coupling mechanism is introduced into the PSI binder to alleviate the adverse mechanical impact (Figure 1a, 1b). On one hand, the rigid PI block provides high modulus to withstand mechanical stress generated by lithiated silicon.…”
Section: Introductionmentioning
confidence: 99%
“…On one hand, the rigid PI block provides high modulus to withstand mechanical stress generated by lithiated silicon. [24,25] On the other hand, the soft siloxane component offers excellent elasticity to accommodate volume expansion via a reversible shape deformation. The elasticity of the PSI is enhanced compared to the PI binder, which is helpful to mitigate mechanical stress and restore deformation upon lithiation and delithiation.…”
Section: Introductionmentioning
confidence: 99%