The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films

Riahi, Mohamed Hedi; Martı́nez-Tomás, C.; Agouram, Saïd; Boukhachem, A.; Maghraoui-Meherzi, H.

doi:10.1016/j.tsf.2017.02.022

Cited by 17 publications

(10 citation statements)

References 30 publications

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“…The residual stress (εhkl) and the dislocation density (δhkl) in the film were evaluated using the following formulas [20] : In addition, the average crystallites size D , micro-stress  and the dislocation density  can be determined using the texture coefficient according to the formulas [6]:…”

Section: X-ray Diffractionmentioning

confidence: 99%

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Gahtar

Benramache

Ammari

et al. 2021

Annals of West University of Timisoara - Physics

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Nickel sulfide (NiS) thin film has been deposited on glass substrates by spray-pyrolysis at 325 ± 5 °C. The precursor aqueous solution was synthetized using hexahydrated nickel nitrates and thiourea. The structural, morphological, optical and electrical properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and four probes electrical measurements. The XRD analysis confirmed the hexagonal structure of NiS thin film, which was found to crystalize along [010] direction with an average crystallites size of 10.5 nm. The lattice parameters are a = b = 3.420 Å and c = 5.300 Å in the space group P63/mmc. The optical properties of the films were investigated through the transmittance and the reflectance measurements. The results revealed that the material exhibits a direct optical band gap of 1.03 eV. The elementary composition analysis confirmed the presence of Ni and S with a stoichiometry ratio (Ni/S) of 1.05. The morphology analysis revealed a homogenous crack-free, compact appearance and a granular surface in all scanned areas. The average roughness of the surface was 6.48 nm. On the other hand, the film exhibits a high electrical conductivity ca. 1.10 × 105 S/cm at room temperature. The above results show that the prepared NiS in this study has a good crystallization, dense morphology, good stoichiometric ratio and high conductivity; therefore, it stands as a potential candidate for application in supercapacitors as an electrode material.

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Section: X-ray Diffractionmentioning

confidence: 99%

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Gahtar

Benramache

Ammari

et al. 2021

Annals of West University of Timisoara - Physics

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“…2(b), revealing important absorption peaks. The peak at approximately 3440 cm −1 can be attributed to the O–H stretching vibration, while the peak around 1632 cm −1 indicates the presence of CO. 30 Additionally, the absorption peak at approximately 1091 cm −1 corresponds to the SO mode of vibration. 31 In the spectra of Bi 2 S 3 and Bi 2 S 3 /CdIn 2 S 4 , the signal at 631 cm −1 is caused by the bending resonance of Bi–S.…”

Section: Resultsmentioning

confidence: 99%

“…The peak at approximately 3440 cm À1 can be attributed to the O-H stretching vibration, while the peak around 1632 cm À1 indicates the presence of CQO. 30 Additionally, the absorption peak at approximately 1091 cm À1 corresponds to the SQO mode of vibration. 31 In the spectra of Bi 2 S 3 and Bi 2 S 3 /CdIn 2 S 4 , the signal at 631 cm À1 is caused by the bending resonance of Bi-S. 30 This indicates that the solvothermal method did not significantly alter the structure of Bi 2 S 3 when preparing composite materials.…”

Section: Structure and Morphologymentioning

confidence: 99%

“…30 Additionally, the absorption peak at approximately 1091 cm À1 corresponds to the SQO mode of vibration. 31 In the spectra of Bi 2 S 3 and Bi 2 S 3 /CdIn 2 S 4 , the signal at 631 cm À1 is caused by the bending resonance of Bi-S. 30 This indicates that the solvothermal method did not significantly alter the structure of Bi 2 S 3 when preparing composite materials.…”

Section: Structure and Morphologymentioning

confidence: 99%

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Construction of an S-scheme Bi₂S₃/CdIn₂S₄ heterojunction for the photocatalytic generation of methyl formate

Sun,

Wu,

Wei

et al. 2023

New J. Chem.

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“…There are several chemical and physical preparation methods for bismuth sulfide thin films including thermal evaporation [22], reactive evaporation [23], Hotwall method [24], chemical vapor deposition (CVD) [25], molecular layer epitaxy (MLE) [26], successive ionic layer adsorption and reaction (SILAR) [27], Self-Assembled Monolayer method (SAMs) [28], spray pyrolysis (SP) [29], sol-gel [30], electrodeposition [31,32] and chemical bath deposition (CBD) [33][34][35].…”

Section: Introductionmentioning

confidence: 99%

Annealing study and thermal investigation on bismuth sulfide thin films prepared by chemical bath deposition in basic medium

Dachraoui

Merino

Mami³

et al. 2018

Appl. Phys. A

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Bismuth sulfide thin films were prepared by chemical bath deposition using thiourea as sulfide ion source in basic medium. First, the effects of both the deposition parameters on films growth as well as the annealing effect under argon and sulfur atmosphere on asdeposited thin films were studied. The parameters were found to be influential using the Doehlert matrix experimental design methodology. Ranges for a maximum surface mass of films (3 mg cm-2) were determined. A well crystallized major phase of bismuth sulfide with stoichiometric composition was achieved at 190°C for 3 hours. The prepared thin films were characterized using Grazing Incidence X-ray diffraction (GIXRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray analysis (EDX). Second, the band gap energy value was found to be 1.5 eV. Finally, the thermal properties have been studied for the first time by means of the electropyroelectric (EPE) technique. Indeed, the thermal conductivity varied in the range of 1.20-0.60 W m-1 K-1 while the thermal diffusivity values increased in terms of the annealing effect ranging from 1.8 to 3.5 10-7 m 2 s-1 .

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The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films

Cited by 17 publications

References 30 publications

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Construction of an S-scheme Bi₂S₃/CdIn₂S₄ heterojunction for the photocatalytic generation of methyl formate

Annealing study and thermal investigation on bismuth sulfide thin films prepared by chemical bath deposition in basic medium

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The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films

Cited by 17 publications

References 30 publications

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Construction of an S-scheme Bi2S3/CdIn2S4 heterojunction for the photocatalytic generation of methyl formate

Annealing study and thermal investigation on bismuth sulfide thin films prepared by chemical bath deposition in basic medium

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Construction of an S-scheme Bi₂S₃/CdIn₂S₄ heterojunction for the photocatalytic generation of methyl formate