The Electrical and Interfacial Properties of Metal-High-$\kappa$ Oxide-Semiconductor Field-Effect Transistors With $\hbox{LaAlO}_{3}$  Gate Dielectric

Chang, Ingram Yin-Ku; You, S. L.; Juan, Pi-Chun; Wang, Ming-Tsong; Lee, J.Y.-M.

doi:10.1109/led.2009.2009554

Cited by 12 publications

(5 citation statements)

References 16 publications

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“…A variety of techniques have been developed for the deposition of metal-oxide thin films . Vapor deposition techniques such as atomic layer deposition (ALD), metal–organic chemical vapor depositions (MOCVD) and pulsed laser deposition (PLD) can yield thin films with excellent electronic and morphological properties, but stringent processing conditions and costly precursor materials are often required to obtain the desired film properties. − Much of the research directed toward thin-film LaAlO 3 has focused on deposition using such techniques. − …”

Section: Introductionmentioning

confidence: 99%

Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution

Plassmeyer

Archila

Wager

et al. 2015

ACS Appl. Mater. Interfaces

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Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Annealing temperatures ≥500 °C result in thin films with low leakage-current densities (∼1 × 10(-8) A·cm(-2)) and dielectric constants ranging from 11.0 to 11.5. When incorporated as the gate dielectric layer in a-IGZO thin-film transistors (TFTs), LaAlO3 thin films annealed at 600 °C in air yielded TFTs with relatively low average mobilities (∼4.5 cm(2)·V(-1)·s(-1)) and high turn-on voltages (∼26 V). Interestingly, reannealing the LaAlO3 in 5%H2/95%N2 at 300 °C before deposition of a-IGZO channel layers resulted in TFTs with increased average mobilities (11.1 cm(2)·V(-1)·s(-1)) and lower turn-on voltages (∼6 V).

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Section: Introductionmentioning

confidence: 99%

Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution

Plassmeyer

Archila

Wager

et al. 2015

ACS Appl. Mater. Interfaces

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“…As a perovskite, LaAlO 3 has a relatively large band gap (5.6 eV), large CB offset (1.8 eV), small lattice mismatch to Si (1.3%), and small oxygen diffusion coefficient, which are all desirable for epitaxial gate dielectric on Si [93][94][95]. Si MOSFET with LaAlO 3 gate dielectric has been reported by I. Y. Chang, et al, where a 7.3-nm LaAlO 3 film was deposited on p-Si by RF sputtering and a post-deposition annealing was performed at 700 • C for 30 s in N 2 [96]. Results showed that the maximum effective mobility (µ eff ) at 300 K was 212.6 cm 2 /Vs; SS was 69.4 mV/dec; and hysteresis was 8.6 mV.…”

Section: Metal-oxide-semiconductor Field-effect Transistors (Mosfets)mentioning

confidence: 99%

“…Moreover, HfLaO, LaTiO, LaZrO, LaYO, etc. have all been tried as the gate dielectric for MOSFETs, and the device properties are listed in Table 2 [91,96,[98][99][100][101][102]. The carrier mobility of the La 2 O 3 /LaSiO sample could reach 300 cm 2 /Vs, but its EOT was not small enough for further scaling down due to the low k value of SiO 2 .…”

Section: Metal-oxide-semiconductor Field-effect Transistors (Mosfets)mentioning

confidence: 99%

Advances in La-Based High-k Dielectrics for MOS Applications

2019

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This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.

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“…The band offset change after annealing should result in a shift in V FB . [17,18] Figure 6 shows the C-V characteristics of 5-nm La 2 O 3 /Al 2 O 3 nanolaminates deposited by ALD with using different oxidants before and after annealing ( f = 100 kHz). The gate voltage (V G ) is swept from accumulation to inversion and then swept back.…”

Section: Al 2pmentioning

confidence: 99%

Influences of different oxidants on characteristics of La${}_{2}$O${}_{3}$/Al${}_{2}$O${}_{3}$ nanolaminates deposited by atomic layer deposition

et al. 2017

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A comparative study of two kinds of oxidants (H 2 O and O 3 ) with the combination of two metal precursors (TMA and La( i PrCp) 3 ) for atomic layer deposition (ALD) La 2 O 3 /Al 2 O 3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La 2 O 3 /Al 2 O 3 nanolaminates are studied. Initial testing results indicate that La 2 O 3 /Al 2 O 3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H 2 O-based La 2 O 3 /Al 2 O 3 nanolaminates due to the residue hydroxyl/ hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H 2 O-based La 2 O 3 /Al 2 O 3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O 3 -based La 2 O 3 /Al 2 O 3 nanolaminates indicate that O 3 is a more appropriate oxidant to deposit La 2 O 3 /Al 2 O 3 nanolaminates for electron devices application.

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The Electrical and Interfacial Properties of Metal-High-$\kappa$ Oxide-Semiconductor Field-Effect Transistors With $\hbox{LaAlO}_{3}$ Gate Dielectric

Cited by 12 publications

References 16 publications

Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution

Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution

Advances in La-Based High-k Dielectrics for MOS Applications

Influences of different oxidants on characteristics of La${}_{2}$O${}_{3}$/Al${}_{2}$O${}_{3}$ nanolaminates deposited by atomic layer deposition

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