Characterization of metal-ferroelectric ( Bi Fe O 3 ) -insulator ( Zr O 2 ) -silicon capacitors for nonvolatile memory applications The effect of band offset on the retention properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Dy 2 O 3 , Y 2 O 3 ) -semiconductor capacitors and field effect transistors Appl. Phys. Lett. 91, 122902 (2007); 10.1063/1.2784203 Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrO x insulator layer J. Appl. Phys. 93, 4137 (2003); 10.1063/1.1558206Nonvolatile ferroelectric-gate field-effect transistors using SrBi 2 Ta 2 O 9 /Pt/SrTa 2 O 6 /SiON/Si structures Appl.

Metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectrics were fabricated. The lowest interface trap density (Dit) of CeO2∕Si interface in comparison with other high-κ gated diodes is 1.47×1012cm−2eV−1 due to the very low lattice mismatch of CeO2∕Si. The interfacial properties were characterized by gated-diode measurements. The surface recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diodes are about 1.03×104cm∕s and 2.73×10−8s, respectively. The effective capture cross section of surface state (σs) extracted using the gated diode technique and the subthreshold swing measurement is about 8.68×10−15cm2.

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