Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric

Abstract

Metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectrics were fabricated. The lowest interface trap density (Dit) of CeO2∕Si interface in comparison with other high-κ gated diodes is 1.47×1012cm−2eV−1 due to the very low lattice mismatch of CeO2∕Si. The interfacial properties were characterized by gated-diode measurements. The surface recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diodes are about 1.03×104cm∕s and 2.73×10−8s, respectively. The effective capture cross section of surface state (σs) extracted using the gated diode technique and the subthreshold swing measurement is about 8.68×10−15cm2.

Effects of layer sequence and postdeposition annealing temperature on performance of La2O3and HfO2multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

“…[1][2][3][4] Rare-earth oxides (REOs) exhibit high dielectric constant and high conduction band offset with respect to silicon and are currently being investigated as high-k gate dielectrics for future ultrascaled devices. [5][6][7][8][9] Among the binary REOs, La 2 O 3 is considered as one of the most promising gate dielectric materials owing to its high ¬ and high band-gap energy. However, strong interdiffusion between InGaAs and La 2 O 3 occurs after postdeposition annealing (PDA) when La 2 O 3 is in direct contact with the In x Ga 1¹x As material.…”

The influence of substrate temperature on the optical and micro structural properties of cerium oxide thin films deposited by RF sputtering

“…Cerium oxide based materials have been extensively used in wide variety of applications such as solid oxide fuel cells (SOFCs) [4], catalysis [5], luminescent materials [6], gas sensors [7,8], polishing materials [9], ferromagnetic oxides [10] and so on. CeO 2 is also suitable for various optical, electro-optical and optoelectronic devices because it is transparent oxide in visible and near-IR spectral regions [11][12].…”

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

“…For SiO 2 , the value is 1-4 × 10 −16 cm 2 [22][23][24] which is smaller than those of high-k dielectrics. For CeO 2 , the value is around 9 × 10 −15 cm 2 even if the adopted measurement method is different [27,28]. In this work, the experimental results show that the HfO 2 films annealed in N 2 /O 2 have lower interface state density ( it ) and higher channel electron mobility ( ) compared to the HfO 2 films annealed in N 2 .…”

“…The lowered mobility may come from the larger surface states which cause the increased interface charge scattering [21]. Table 1 lists the capture cross-sections of surface states ( ) at the interface between silicon and oxides, for example, SiO 2 , ZrO 2 , Al 2 O 3 , CeO 2 , and HfO 2 [22][23][24][25][26][27][28][29]. For SiO 2 , the value is 1-4 × 10 −16 cm 2 [22][23][24] which is smaller than those of high-k dielectrics.…”