In this letter, a high-k composite oxide composed of La 2 O 3 and HfO 2 is investigated for n-In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La 2 O 3 (0.8 nm)/HfO 2 (0.8 nm) on InGaAs with post deposition annealing at 500°C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D it ) of 7.0 × 10 11 cm −2 eV −1 , small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved. Index Terms-HfO 2 , InGaAs, La 2 O 3 , metal-oxide-semiconductor (MOS), molecular beam deposition (MBD), post deposition annealing (PDA).

In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO 2 and La 2 O 3 on In 0.53 Ga 0.47 As for MOS device application. Both multilayer HfO 2 (0.8 nm)/La 2 O 3 (0.8 nm)/In 0.53 Ga 0.47 As and La 2 O 3 (0.8 nm)/HfO 2 (0.8 nm)/In 0.53 Ga 0.47 As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent D it of 7.0 ' 10 11 cm %2 &eV %1 can be achieved using multiple layers of La 2 O 3 (0.8 nm) and HfO 2 (0.8 nm) on the In 0.53 Ga 0.47 As MOS capacitor with optimum thermal treatment and layer thickness.

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The purpose of this study is to make an electroluminescent fabric, through the dip-coating method, use different layer materials in turns to coating on the conductive fabric, so that the final shape of the fabric can through the electroluminescence principle to achieve the effect of light on the surface. According to the dip-coating procedure, the resin materials in this study are BT2100, phosphor adding with ITK5517, ITK5517, and the outer electrode layer. To confirm the effect of dip-coating method, in the beginning of the study, for each resin material layer and electrode layer (ITO / PET, poly-3,4-ethylenedioxythiophene (PEDOT: PSS), poly-aniline (PANI)) to discussed the coating uniformity and stiffness etc. on the fabric. After the practice to be established, than estimate the polymer of the surface, it is mainly to mixed in different proportions within PEDOT:PSS and PANI, to fill up the defects of conductive interface in the coating method with PEDOT:PSS, through the good surface adhesion of PANI, than make it become more suitable electrode on the electroluminescent fabric. In experimental results, we found that dip-coating can truly achieve the uniform distribution of each sol on the fabric, to obtain better uniformity on the surface, and then the mixture ratio of PEDOT: PSS and PANI in 2:1 and 3:1 , will have the best brightness(17.38lux, 19.86lux) and light uniformity(83.5%, 85.5%).