Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric

Abstract

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Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

“…Recently, transition metal oxides such as tantalum oxide, titanium dioxide, aluminium oxide, zirconium oxide, hafnium oxide, lanthanum oxide and associated aluminates have emerged as alternative to SiO 2 gate dielectric material . Among those oxides, titanium dioxide (TiO 2 ) has great potential because of its high dielectric constant, high thermal stability and low leakage current density .…”

Investigation of nonuniformity phenomenon in nanoscale SiO2 and high-k gate dielectrics

“…It has been reported that the reliability characteristics can be improved as the thickness of HfO 2 thickness decreases. 3 In terms of the current density fluctuations in Fig. 7 and the reliability characteristics in Fig.…”

“…1,2 Meanwhile, to maintain the physical thickness of gate oxide, HfO 2 has been considered as one of the most promising high-k materials to replace the conventional SiO 2 due to its high dielectric constant and good thermodynamics stability. [3][4][5] On the other hand, in order to test the ultrathin dielectric characteristics for MOS or non-volatile memory devices, large-area MOS capacitors (MOSCAPs) are still commonly used. The capacitance-voltage (C-V) measurement is an important technique to investigate the electrical characteristics of MOS devices.…”

Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices

“…Every cell is associated with a defect generation rate (k) and some of the columns are represented as grain boundaries (GB) with a higher value of k that arises due to higher local relative permittivity at GB locations due to increased oxygen deficiency [15]. We simulate the forming process for t ox -$ 2.4 nm, 3.6 nm and 4.8 nm, considering a defect size of a 0 $ 8 Å [16]. The standard Monte Carlo procedure is implemented where the next location of defect evolution is chosen based on a random number generator, considering the weightage of the k values at the grain and GB locations.…”